+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
News Article

GF awarded $35M to accelerate GaN plans


US funding brings Vermont fab closer to large-scale production of next-generation GaN chips

GlobalFoundries has been awarded $35 million in federal funding from the US government to accelerate the manufacturing of GaN-on-silicon chips at its facility in Essex Junction, Vermont.

With the new funding, awarded by the Department of Defense’s Trusted Access Program Office (TAPO), GF plans to purchase additional tools to expand development and prototyping capabilities, moving closer to at-scale 200mm GaN-on-silicon production.

GF says it also plans to implement new capabilities for reducing the exposure of GF and its customers to supply chain constraints of gallium, while improving the speed of development, assurance of supply and competitiveness of US-made GaN chips.

The funding builds on previous collaboration with the US government – including $40 million in support from 2020-2022 .

GF’s facility in Essex Junction, Vermont, near Burlington, was among the first major semiconductor manufacturing sites in the United States. Today around 1,800 GF employees work at the site.

Search the news archive

To close this popup you can press escape or click the close icon.
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.

Please subscribe me to:


You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: