Laser Components shows breakthroughs at SPIE LASE
Company to present on high-power density laser diodes for LiDAR applications and InGaAs photodiodes
Laser Components is presenting several technological breakthroughs at the SPIE LASE conference during Photonics West in San Francisco (27th January to 1st February 2024).
These include the work by Thierno-Mamoudou Diallo, opto-electronics and III-V semiconductor specialist at Laser Components Canada, on significant advancements in the design and fabrication of high-power laser diodes for LiDAR applications. Their triple junction 905nm lasers feature optimised mode profiles and an effective confinement structure. This allows for significantly higher power densities.
Also featured will be the latest development in InGaAs technology presented by Arshey Patadia, senior process engineer for avalanche photodiodes at the Laser Components Detector Group.
Patadia and his team came up with a 2.6 µm Extended InGaAs p-i-n detector that grants linear behaviour when operated under reverse bias. This kind of linearity is critical for all optical detectors used in Fourier Transform Infrared (FTIR) Spectroscopy. The company believes the development will open up new capabilities for characterisation tasks in pharmacology and materials science.