Guerrilla RF releases GaN power amplifier dice
Guerrilla RF has released the first in a new class of GaN-on-SiC HEMT power amplifiers being developed by the company.
The GRF0020D and GRF0030D are unmatched discrete transistors that provide up to 50W of saturated power for customers within the wireless infrastructure, military, aerospace and industrial heating markets who are looking to integrate bare die within their own custom MMICs.
“GaN technology is critical for next-generation, high-performance, energy-efficient RF systems and devices. We’re already seeing strong demand for the GRF0020D and GRF0030D.”
Each device offers exceptional flexibility, supporting either 50V or 28V supply rails while covering multiple octaves of operational bandwidth for continuous wave, linear, and pulsed modulation schemes. When using a 50V rail, the GRF0030D is rated for 50W (PSAT) operation from DC to 6GHz, with gain varying from 13.5dB to 23.7dB. The device also supports 28V operation while delivering up to 27.5W of saturated output power.
Similarly, the GRF0020D variant provides up to 30W and 19W of saturated power when using 50V and 28V rails, respectively. This slightly lower power HEMT supports frequencies up to 7GHz while providing 13.8dB to 24.3dB of gain. As with all of Guerrilla RF’s bare die offerings, each device is 100 percent DC production tested to ensure KGD (known good die) compliance.
Ryan Pratt, CEO and founder of Guerrilla RF, commented, “GaN technology is critical for next-generation, high-performance, energy-efficient RF systems and devices. We’re already seeing strong demand for the GRF0020D and GRF0030D.” He added, “Another advantage is that these devices are fabricated in the US, aligning with the objectives of the CHIPS Act of 2022 and ensuring a robust, domestic supply chain for our customers.”
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