Loading...
News Article

Finwave signs distribution agreement with RFMW

News
Partnership expands access to Finwave’s GaN-on-Si RF chips

GaN innovator Finwave Semiconductor has signed a global agreement with RF and microwave device distributor RFMW, bringing its RF switches and upcoming RF power amplifiers to the distributor's line-card.

Finwave’s GaN-on Si RF chips are targeted to a wide range of RF applications including comms infrastructure, Wi-Fi routers, satellite, radar, drones, anti-drones, test & measurement equipment, and medical equipment.

Finwave Semiconductor CEO Pierre-Yves Lesaicherre said. “Our partnership with RFMW is a strong validation that our innovative technology can deliver high-performance solutions for a wide range of customers and applications worldwide. By working with RFMW, we are significantly expanding access to our cutting-edge GaN-on-Si RF chips, reaching customers who may not have been aware of Finwave or previously had access to our products.”

Joel Levine, president, RFMW said: “This partnership enables us to support our customers with high-efficiency, next-generation products that drive advancements in 5G, aerospace, and defence applications.”

Evaluation kits and product samples will be available from RFMW later this month, with the global release of Finwave’s first RF switches planned for April 2025.

At MWC25 in Barcelona, Finwave will provide updates on the performance and availability of its forthcoming RF switch lineup as well as the company’s future power amplifier products.

EU invests €15M to help firms use photonics
ST and Innoscience sign GaN deal
Lumentum shows InP advances at OFC
A step towards higher DUV LED efficiency
Quantum Science achieves ISO 9001:2015 certification
Ascent wins order for power-beaming module
Navitas Partners with Great Wall for 400V-DC power
SemiQ supplies SiC MOSFET modules for EV battery cell cyclers
Coherent and Keysight collaborate on 200G/lane multimode VCSEL tech
Lumentum and Marvell exhibit integrated 450G optical interface
Marktech announces new MWIR LEDS
Imec identifies stable range for GaN MISHEMTs in RF PAs
Polar Light completes $3.4m funding round
Lynred launches advanced thermal imaging modules
Altum RF expands Sydney design centre
Sivers announces partnership with O-Net
Ayar Labs unveils first UCIe optical chiplet
Aixtron delivers InP tool to Nokia
WHU-USTC team demo novel GaN chip temperature monitoring
Phlux lands £9m to take InGaAs sensors to next level
4-inch gallium oxide facility established in Swansea
Mazda and Rohm collaborate on automotive GaN
University of South Carolina chooses MOCVD tool from TNSC
Wolfspeed appoints new CEO amidst funding crisis
SiC slowdown is only short term, says Yole
Pragmatic launches flexible IGZO-based NFC chip
Poet ships latest optical engine samples
EU project to develop 1200V DC powertrain
£250m to turbocharge Welsh compound semi cluster
Scientists harness phonon-polariton electroluminescence
TU Graz team reveals the secrets of heat conduction
Aixtron to partner in ‘GraFunkL‘ UVC project
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
x
Adblocker Detected
Please consider unblocking adverts on this website