Integra announces single-device 10 kW GaN/SiC transistor for L-Band
Integra Technologies, a US RF and microwave semiconductor company, has announced the industry’s first single high voltage GaN/SiC 150V transistor, the IGN1030S10000, that produces 10 kW of pulsed saturated output power at L-Band.
The company says achieving this level of power from a single transistor represents a significant advance for RF power amplifier system designers.
Traditional high-power architectures at L-band typically require power combining from multiple lower-power devices, increasing circuit complexity, insertion loss, thermal management demands and overall system cost. By delivering 10 kW from a single 150V HV GaN/SiC transistor, the IGN1030S10000 enables substantially simpler amplifier system architectures while reducing the size, cost, and complexity of high-power transmitter architectures. This part simultaneously enables smaller system volumes and increased system power density.
"As the pioneer of HV GaN/SiC Technology, Integra has spent years pushing the boundaries of what’s possible for solid-state RF power — and achieving 10 kW of pulsed output power at L-Band from a single transistor marks our most defining milestone yet” said Integra's president and CEO Suja Ramnath.
She added: "Prior to Integra’s HV GaN/SiC, the practical solid-state replacement of Vacuum Electron Devices (VEDs) was limited to 10 kW. Now, Integra has extended practical, solid-state replacement of VEDs to the megawatt level in high-power architectures — opening a new chapter for system architects long constrained by the limits of existing solutions. This is not incremental progress. This is a fundamental shift in what is possible, and Integra intends to keep leading it."
The IGN1030S10000 is targeted at L-Band pulsed applications where peak power, efficiency and ruggedness are critical. Integra’s 150V HV GaN/SiC technology can be leveraged at other frequencies for high-power, high-performance applications.
