BAE moves to next phase of DARPA GaN project
BAE Systems’ FAST Labs research, development and production organisation has successfully completed Phase 1 of the Defense Advanced Research Projects Agency’s (DARPA) Technologies for Heat Removal in Electronics at the Device Scale (THREADS) program and has been awarded continued support to move into Phase 2.
The THREADS program aims to overcome temperature limitations in high-performance RF electronics in GaN devices. Overcoming these limitations will significantly increase the power and range of vital military systems.
Isaac Wildeson, principal investigator at BAE Systems’ FAST Labs said: “The progress we’ve made during Phase 1 validates our approach to material and process enhancements and brings us closer to unlocking the full potential of RF-based systems for our warfighters.”
The company says that successful thermal management developed through this program will nearly triple the range of RF systems, enhancing the safety and engagement distances for military personnel.
BAE Systems’ work on THREADS is being conducted at its Microelectronics Center (MEC) in Nashua, New Hampshire, a DoW Category 1A Trusted Supplier, leveraging its established expertise in the development and manufacturing of advanced GaN and GaAs integrated circuits. THREADS includes collaboration with Modern Microsystems, Penn State University, Stanford University, the University of Notre Dame, and the University of Texas at Dallas.
