Power Integrations demos 2200V GaN
Power Integrations has announced that its PowiGaN GaN technology is now rated at up to 2200V, exceeding the voltage capabilities of other commercially available GaN technologies.
“Our 2200V PowiGaN technology provides substantial voltage margin for emerging high-voltage power systems while enabling the high switching frequencies required to maximise power density,” said Jennifer Lloyd, president and CEO at Power Integrations.
“Emerging applications include next-generation AI data centres, where industry roadmaps point toward 1500 V distribution architectures, as well as future EV battery and auxiliary power systems operating at increasingly higher output voltages (48V). This milestone breakthrough extends the reach of GaN into voltage ranges traditionally served by SiC, enabling a compelling high-frequency alternative for applications such as solar, HVDC and advanced industrial power conversion.”
The company says that its PowiGaN ICs rated at 1700 V are already being designed into single-stage data centre auxiliary power applications, while 1250 V PowiGaN offers a simpler alternative to stacked solutions in the main power path in 800 VDC data centres. The introduction of 2200 V PowiGaN technology means that even higher bus architectures can be supported, future-proofing power designs not only for data centres but also for EVs, photovoltaic inverters and battery-energy storage systems.
“The shift to 800 VDC bus architectures in AI data centres is reshaping power semiconductors," explains Roy Dagher, technology and market analyst, Compound Semiconductors at Yole Group. "GaN's voltage ceiling has kept it out of the main power path, ceding that ground to SiC. A 2200 V rating changes this, giving margin for single-stage topologies and future-proofing emerging 1500 V data centre and EV designs. We expect the power GaN device market to reach $3.5 billion by 2031, and extending GaN into these higher-voltage applications is an important part of that growth.”
