TekSiC Xforge PVT targets next gen SiC crystal growth
Sweden-basedTekSiC, a semiconductor materials firm with a focus on SiC, has announced a high-temperature induction heating furnace for SiC crystal growth up to 200 mm in diameter.
Called Xforge PVT, the furnace has been designed to suit research applications and to be integrated into large-scale SiC production.
“The Xforge PVT is a pivotal advancement in our company’s journey,” says Joachim Tollstoy, CEO of TekSiC. “It reflects our commitment to innovation and is designed to adapt to the specialised needs of semiconductor industries and research institutions. We built it to deliver exceptional performance in the most challenging environments, with a modular design that allows for tailored solutions to meet each customer’s requirements.!”
The Xforge PVT's compact, modular architecture allows for easy customisation, enabling users to adjust the furnace’s features to suit their specific PVT application, according to TekSiC.
The small footprint and stack-ability of the Xforge PVT also increases the number of furnaces that can fit into a production facility, allowing integration into large-scale SiC production..
The induction-heated, Xforge PVT system is designed to provide precise pressure and temperature control. It also supports machine learning applications.
According to the company, the Xforge PVT has undergone extensive industrial reliability testing at customer sites over several years, proving its durability in extreme high-temperature applications.
The Xforge PVT is available for immediate delivery.
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