Infineon expands XHP 2 CoolSiC range
Infineon has expanded its XHP 2 power module portfolio with new variants incorporating 2300V CoolSiC MOSFETs, designed for high-voltage power systems including renewable energy applications and battery storage systems.
The new 2300 V class devices support DC-link voltages of up to 1500 V, addressing the industry trend toward higher system voltages. The modules are available in several variants, offering on-resistance (RDS(on)) values ranging from 1 mΩ to 2 mΩ and isolation voltages of 4 kV or 6 kV.
Implemented in the XHP 2 package, the modules are said to feature symmetrical switching behaviour for easy paralleling in large power converters and offer a standardised platform that enables developers to balance efficiency and performance according to application requirements.
All variants integrate Infineon’s .XT interconnection technology, enhancing reliability and extending operational lifetime. The modules are also available with a pre-applied thermal interface material, simplifying assembly while supporting consistent thermal performance.
Infineon says these characteristics translate into measurable system-level benefits. In a wind power demonstration system, a power density of 300 kW/L was achieved, while tests in battery storage systems showed semiconductor losses of less than 0.7 percent of the output power. With this portfolio expansion, Infineon supports scalable solutions for next-generation high-voltage power systems across a wide range of renewable energy applications.
The XHP 2 CoolSiC MOSFET modules with a 2300 V rating, FF1000UXTR23T2M1, FF1300UXTR23T2M1, FF2000UXTR23T2M1, and FF1000UXTR23T2M1_B5, are available now from Infineon and its distribution partners.
