Infineon to establish Europe's first volume 300mm GaN facility
Infineon is establishing the world’s first high-volume manufacturing facility for next-generation GaN power semiconductors on 300mm wafers in Europe. As part of the project, Infineon will invest around €1.1 billion in its existing cleanroom facilities at the Villach site in Austria by 2034.
Production is scheduled to start by the end of 2027. Infineon’s investment addresses the rapidly growing demand for high-performance power supply solutions. GaN enables significant efficiency gains in numerous applications, such as AI data centres, energy infrastructure, e-mobility, robotics and consumer electronics.
'By establishing high-volume manufacturing on 300mm wafers, we will be the first company in the world to bring GaN power electronics into volume production,” says Jochen Hanebeck, CEO of Infineon Technologies AG. “In doing so, we are paving the way for the widespread use of GaN in a wide range of key applications in areas such as artificial intelligence, energy infrastructure, e- mobility and robotics. This new, state-of-the-art manufacturing facility translates innovation leadership into direct customer benefits.”
Christian Stocker, Federal Chancellor of the Republic of Austria: “With Infineon’s billion-euro investment, we are witnessing one of the largest single investments in the history of Austria’s high- tech industry. This is not only a strong commitment to Austria as a business location but also helps ensure that the future of the semiconductor industry will not be shaped solely in Asia or the United States, but also in Austria and Europe."
The investment is being supported under the European Chips Act. The European Commission approved €319 million in state aid. The formal funding commitment by the Austrian Federal Ministry for Economic Affairs, Energy and Tourism is expected within the stipulated time limits.
