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Monday 24th August 2015
Integrated VCSEL prototypes planned for Q2 2016
Friday 21st August 2015
Andrew Cuomo announces next stage of Nano Utica Initiative
Friday 21st August 2015
Taiwanese researchers use readily available components to make bendy GaN LEDs
Thursday 20th August 2015
Gen 4 GaN technology expected to beat semiconductor cost per watt of LDMOS 
Thursday 20th August 2015
Transmode acquisition enables Infinera to offer an end-to-end optical network portfolio
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Thursday 20th August 2015
Oregon team develops microwave heated, continuous flow approach to making CuInSe2 QDs
Thursday 20th August 2015
US scientists develop rare-earth-free LED phosphors
Thursday 20th August 2015
Integrated phase and amplitude control at microwave frequencies
Wednesday 19th August 2015
$85.4 million Q2 revenue is up 10 percent on previous quarter
Wednesday 19th August 2015
Europe is the only major world region that posted positive year-over-year growth in 2Q15
Wednesday 19th August 2015
InGaP front end ICs provide integration, efficiency, and linearity to latest 802.11ac router
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Wednesday 19th August 2015
ALLOS Semiconductors' mature 150 and 200mm technology now established
Tuesday 18th August 2015
Company releases new financial guidance for Q4
Tuesday 18th August 2015
Peter Di Maso to lead marketing and new product development
Tuesday 18th August 2015
Fast switching amplifiers suit UAVs, radar, military radio and satellite applications
Monday 17th August 2015
Nano-optical probe shows energetically disordered edge region
Monday 17th August 2015
Advances in blue GaN-on-Silicon LEDs to be presented at 11th International Conference On Nitride Semiconductors (ICNS)
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Friday 14th August 2015
San Diego HQ adds third building to accommodate company's growing team
Friday 14th August 2015
Field-proven transciever provides seamless transition from 10G to 40G Ethernet
Friday 14th August 2015
High-Power module provides EDFA designers with new options to increase output power per stage
Thursday 13th August 2015
PAR lamp, T8 tube, and A55 bulb qualified to work at -65degC
Thursday 13th August 2015
1.82 mm2 device targets high frequency power conversion
Thursday 13th August 2015
Researchers to develop compact simulation model for GaN power devices

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