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Thursday 3rd April 2014
SemiTEq targets intensive R&D and small-scale production for up to 8” wafers
Thursday 3rd April 2014
A new development could pave the way to lower cost and safer optoelectronics, solar energy conversion and faster computer circuitry
Thursday 3rd April 2014
Although seventeen MBE systems were sold to research customers in 2013, no production machines were sold in the same period
Thursday 3rd April 2014
The ESTnet awards event honours prominent businesses and individuals in the Welsh electronics and high technology industry
Thursday 3rd April 2014
The new Ohio centre will support remanufacturing and repair methodology. It will also expand the firm's product repair capability
Thursday 3rd April 2014
A novel thermal interface material could be used to draw heat away from high-brightness LEDs and other semiconductor devices
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Wednesday 2nd April 2014
Diamond materials are anticipated to triple power density over silicon carbide
Wednesday 2nd April 2014
Silicon carbide and gallium nitride devices can be tested for high voltage breakdown
Wednesday 2nd April 2014
Internet Solutions is the first company to deploy the firm's indium phosphide (InP) based super-channels in South Africa
Wednesday 2nd April 2014
Service providers said Infinera did well in technology innovation, ease of operation, high reliability and leading services and support
Wednesday 2nd April 2014
Regions where Samco will distribute the reactors include the Far East and Europe. The systems are used in GaN and solar cell production
Tuesday 1st April 2014
Built to reflect the lifespan of LED lighting, the announcement provides customers and end-users with a new level of confidence backed by the performance of Bridgelux Vero Series LED arrays
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Tuesday 1st April 2014
The tool will be used in the production of advanced LEDs and solar cells and silicon based devices
Tuesday 1st April 2014
The agreement will enable MACOM to deliver GaN wafers grown on 100mm, 150mm and 200mm silicon substrates for RF applications
Tuesday 1st April 2014
Wide band gap semiconductors may reduce the size of a vehicle cooling system by about 60 percent and cut the size of a fast DC charging station
Tuesday 1st April 2014
The high gain gallium arsenide power amplifiers with high linearity performance are suited to commercial, industrial and military applications
Tuesday 1st April 2014
The innovator of III-V devices has also taken on ex Fairchild executive Daniel DeSimone as VP of Product Development at the POET laboratories
Tuesday 1st April 2014
Refinements to waveguides and active regions enable QCL room-temperature operation at 19 µm.
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Monday 31st March 2014
The wafers will be used in the next generation CMOS program
Monday 31st March 2014
The III-V based LED is suited for optical fibre communications
Monday 31st March 2014
During the past 12 months the lumens per dollar ratio of LED lamps has increased by 17.5 percent to 30.2 lumens per dollar
Monday 31st March 2014
The gallium arsenide device operates from DC to 20 GHz
Monday 31st March 2014
The LUXEON 3020 emitter crosses the 1,000 lumens per dollar threshold
Monday 31st March 2014
The gallium nitride on silicon power transistors can operate in harsh environmental conditions

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