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Thursday 12th June 2014
GaN could partially displace SiC thanks to better price positioning
Wednesday 11th June 2014
The substrates grown on aluminium nitride substrates aim to improve productivity and increase accuracy
Wednesday 11th June 2014
III-V MOSFETs could lower power consumption for the next generation of servers
Wednesday 11th June 2014
Lead sulphide quantum dots may be cheaper and brighter than current solar cells used outdoors
Tuesday 10th June 2014
The acquisition should provide OptaSense, a wholly owned susidiary of QinetiQ, with secure access to an engineering team which develops coherent, low noise semiconductor lasers
Tuesday 10th June 2014
The device supplier of analogue semiconductor devices with a focus on III-V based products and complex digital and mixed signal CMOS based devices will be paid by June 30th
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Tuesday 10th June 2014
The low noise figure, and high gain amplifier is suited to in receiver applications
Tuesday 10th June 2014
A new approach replaces the magnets with microwaves, and designers say it could be scaled to produce X-ray light
Monday 9th June 2014
Hittite’s strength in RF, microwave, and millimeter wave technology complements ADI’s RF and signal conversion expertise
Thursday 5th June 2014
The system can be used for compound semiconductor characterisation
Thursday 5th June 2014
The III-nitride based LEDs enable energy savings and environmental protection
Thursday 5th June 2014
The RF power semiconductor market is expected to top $1 billion in 2013. ABI Research says the market bridges the gap between two older technologies, exhibiting the high-frequency performance of GaAs combined with the power handling capabilities of silicon LDMOS
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Thursday 5th June 2014
Fraunhofer ISE has developed a new high voltage silicon carbide power device. The 30 kW medium-voltage DC-DC converter incorporates 10 kV devices
Thursday 5th June 2014
The broadband gallium nitride amplifier offers up to 100W peak pulsed power and 50W average power
Thursday 5th June 2014
The UEFC-4900 will bring the Auratus deposition process enhancement methodology benefits to Plessey's MaGIC LED production line
Wednesday 4th June 2014
The gallium nitride modules have a power added efficiency of 71.2 percent
Wednesday 4th June 2014
The UK headquartered firm will use Comprel Srl to distributeits GaN-on-silicon LED products
Wednesday 4th June 2014
Digi-Key's reach in the global electronic marketplace suits SunLEDs broad line of LED products and packages
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Wednesday 4th June 2014
The pioneer of blue/white gallium nitride-based LEDs on silicon substrates will be describing its latest developments at LIGHTFAIR International
Wednesday 4th June 2014
The gallium nitride satellite devices are suited for use in communication terminals
Wednesday 4th June 2014
The firm says this is the first frameless copper-indium-selenide module with back-rails admitted for BIPV
Wednesday 4th June 2014
The compound semiconductor LEDs offer a portable system that provides a uniform, instant on and a 30 mW/cm2 field of narrow band UVA irradiation of 365nm
Tuesday 3rd June 2014
Researchers say a II-V semiconductor could yield practical devices with the same electronic properties as 2-D graphene
Tuesday 3rd June 2014
The company will use the Aixtron reactor to grow gallium nitride on silicon carbide RF power devices

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