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Thursday 10th April 2014
The firm's RF Silicon On Insulator substrates are claimed to deliver a 50-percent performance improvement over similar solutions
Thursday 10th April 2014
Building of a 30,000 square foot facility has started and it should be up and running by October
Thursday 10th April 2014
Aixtron, Veeco and Taiyo Nippon Sanso represent 97 percent of the LED reactor market share
Thursday 10th April 2014
SemiTEq JSC, a Russian manufacturer of MBE systems, has sold a STE75 research MBE system to the Centre for Advanced Nanotechnology University of Toronto, Canada.
Thursday 10th April 2014
The foundry was recognised for continued support, partnership commitment and delivery performance
Wednesday 9th April 2014
The gallium nitride market will be dominated by power devices and draw most of its revenue from the communication infrastructure sector
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Wednesday 9th April 2014
The European market turned around in 2013 with double-digit growth
Wednesday 9th April 2014
Nanostructures on top of an active solar material might be able to capture the light and increase efficiency
Wednesday 9th April 2014
The Mobile Hotspots program has progressed towards providing 1 Gb/s communications backbone to deployed units. During Phase 1, performers demonstrated output power exceeding 1 watt and 20 percent power added efficiency (PAE) from a single GaN chip operating at E-Band frequencies
Tuesday 8th April 2014
The 56 x 2 inch reactor will be used to grow gallium nitride on alternative substrates
Tuesday 8th April 2014
The French firm's III-V Concentrix multi-junction cells will be used in power plants in France
Tuesday 8th April 2014
The firm says incumbent gallium arsenide-based RF solutions do not rise to the challenge of new complexity in the telecoms market
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Monday 7th April 2014
The cell was cut from a 30cm by 30cm substrate and produced using a sputtering-selenisation formation method
Monday 7th April 2014
A new development at IBM culminates in a stress-free gallium nitride material ideally-suited for enabling polarisation-free visible light emitters
Monday 7th April 2014
A new process could provide more precise control of the processing temperature needed to create CIS and CZTS solar cells
Monday 7th April 2014
The firm has released new pumps for ultra-high vacuum applications and for installation in compact pump-system solutions and processes with small backing pumps
Monday 7th April 2014
Along with Chopro, Solar Frontier will build and operate Prefecture’s largest megasolar power plant Mainbody:
Friday 4th April 2014
The firm has developed a fast method of obtaining ultra-clean surfaces free of organic contaminants on most substrates including gallium arsenide and silicon
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Friday 4th April 2014
Silicon based manufacturers, Intel and Arista spearheaded the creation,
Friday 4th April 2014
Using InN nanowires to make LEDs eliminates the lattice mismatch problem of layered devices, and can significantly improve LED efficiency
Friday 4th April 2014
The ultra-wideband performance, high output power gallium arsenide device is suited to microwave radio and VSAT, test instrumentation, military, space, and fibre optic applications
Thursday 3rd April 2014
Using hybrid HVPE-Ammontermal approaches allows the manufacture of gallium nitride material for high-end applications. The key is that a low dislocation density is achieved
Thursday 3rd April 2014
SemiTEq targets intensive R&D and small-scale production for up to 8” wafers
Thursday 3rd April 2014
A new development could pave the way to lower cost and safer optoelectronics, solar energy conversion and faster computer circuitry

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