Info
Info
News search:

< Page of 578 >

News


Wednesday 8th January 2014
Offered in compact SMD packages the devices feature improved thermal performance of 325 K/W
Wednesday 8th January 2014
The gallium nitride on gallium nitride pioneer was honoured for creativity and sustainability
Wednesday 8th January 2014
Kurt J Lesker expands manufacturing operations into Europe
Tuesday 7th January 2014
The versatility of new technique for materials shows promise as a new benchmark in exfoliation chemistry of two-dimensional chalcogenides
Tuesday 7th January 2014
Citizen Electronics, Cree, Nichia, Osram, Philips Lumileds, Samsung Electronics, and Seoul Semiconductor are expected to dominate the COB LED market up to 2018
Tuesday 7th January 2014
The infrared III-arsenide based chip is claimed to have set new records in the LED industry
Info
Monday 6th January 2014
The 670nm to 1000nm III-V based Vertical Cavity Surface Emitting Lasers (VCSELs) come in a variety of packages for multiple applications.
Monday 6th January 2014
Many of the pumps are suited to MOCVD growth of III-V semiconductors
Monday 6th January 2014
In the last year the lumens per dollar ratio of LED lamps has increased by 31 percent to 29.9 lumens per dollar
Friday 3rd January 2014
The firm's new gallium arsenide based SMT I/Q Upconverter and 2 W power amplifier are ideal for microwave radio, radar & SATCOM applications
Friday 3rd January 2014
Following positive feedback from its campaign in South California, XsunX has set a new target for 2014. The solar cell manufacturer aims to increase systems sales more than was previously anticipated
Friday 3rd January 2014
The firm's semi-automated wet processing system will be used for 200 mm compound semiconductor wafers
Info
Thursday 2nd January 2014
The net proceeds from the offering are expected to be used for working capital and other corporate purposes and possibly licensing or acquiring intellectual property or technologies
Thursday 2nd January 2014
The gallium nitride based 'Production Act Title III Project' has resulted in improved technologies for communication, imaging and sensor systems
Thursday 2nd January 2014
The indium phosphide (InP) laser manufacturer has achieved certification from TUV USA
Thursday 2nd January 2014
The gallium nitride-on-silicon power amplifier covers numerous applications up to 1GHz
Monday 30th December 2013
The new manufacturing facility has a phase one, full-production capacity of 40 MW per year
Monday 30th December 2013
The gallium nitride SPICE chips are incorporated in NI's Multisim 13.0 software, which is designed to improve power system efficiency and reduce final product size and development time
Info
Sunday 29th December 2013
The silicon carbide 3.3kV, 1,500A inverter is suitable for high power trains
Sunday 29th December 2013
P+E HEMS hydrogen quality analysers will detect trace contaminant and alert operators at III-V fabs in Taiwan and China
Friday 27th December 2013
Seoul Semiconductor was again selected as the only LED manufacturer in the Top 20 2013 IEEE Semiconductor Manufacturing Patent Power Ranking
Monday 23rd December 2013
A high-performance gate dielectric can be formed with a stack of interleaving La2O3 and HfO2 layers that are subsequently annealed at 500 °C.
Monday 23rd December 2013
: The exchange of this debt to equity is a move in Oclaro's recent restructuring efforts
Wednesday 18th December 2013
With EpiTriple TT and AbsoluT, temperature calibration of all three heating zones of an MOCVD showerhead reactor can be achieved

×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info