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Wednesday 26th March 2014
The firm's UV laser systems are suited for fabricating complex 2-D and 3-D structures such as micron-scale devices. Heat-free laser ablation facilitates exact tolerances without collateral damage to the material
Wednesday 26th March 2014
The gallium nitride on silicon dotLED is 0.2mm in height and designed for applications that demand low profile electronic components
Wednesday 26th March 2014
The III-V multijunction cells will be used for the SNC global navigation satellite system
Wednesday 26th March 2014
The 1752 laser platform features 1.2 GHz operational bandwidth with low adiabatic chirp to maximise signal quality in short and long lengths of fibre
Wednesday 26th March 2014
Si-Ge-C superlattice films enable efficient light absorption and emission across an extended wavelength range, from UV to MWIR
Tuesday 25th March 2014
Superior thermal conductivity enables an output power hike for high-voltage LEDs
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Tuesday 25th March 2014
The gallium nitride-on-silicon white LEDs are suited to general lighting applications. Mass production is expected to start at the end of March
Tuesday 25th March 2014
The contract is aimed at the company transferring 0.14 µm gallium nitride technology and manufacturing on 6 inch wafers to produce air force millimetre wave devices
Tuesday 25th March 2014
Using InGaAs on InAs stems grown on graphene could benefit solar cell and laser technology
Tuesday 25th March 2014
Rhenium atoms have a relatively large atomic weight, which means electron spin-orbit interactions are significant
Monday 24th March 2014
The Tokyo based firm is offering gallium nitride MOCVD for deposition on sapphire substrates
Monday 24th March 2014
The Moapa Southern Paiute Solar project is the first utility-scale solar project on tribal land and will deliver much needed economic benefits to the Tribe and Nevada
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Monday 24th March 2014
This is aimed at accelerating the global commercialisation of SJ's CS multijunction technology
Monday 24th March 2014
The company has introduced the Acrich MJT 2525 series with high lumen density in a small footprint
Friday 21st March 2014
The new white III-nitride chip series implements a novel phosphor coating process
Friday 21st March 2014
The specialist in GaN-on-silicon technology was awarded for its fast growth in revenue and employees in a three-year time span
Friday 21st March 2014
35 presentations equipped delegates with a comprehensive overview of the compound semiconductor industry
Thursday 20th March 2014
Superconductivity and LED technology could provide a new approach to quantum devices
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Thursday 20th March 2014
The market analysts believe that the LED market will stick to GaN-on-sapphire
Thursday 20th March 2014
The manufacturer of compound semiconductor epitaxial wafers is increasing the ability to produce high volumes of 4-inch and 6-inch wafers for VCSELs, edge-emitting lasers, detectors and photovoltaics
Thursday 20th March 2014
The firm says its gallium nitride technology greatly reduces material waste and the energy needed to produce GaAs or silicon line amplifiers
Thursday 20th March 2014
The FluidJet metal liftoff system is claimed to eliminate device damage, while using 80 percent less chemical than current single wafer processing solutions
Wednesday 19th March 2014
The firm says its latest III-nitride based CoB LEDs offer twice the light from half the surface
Wednesday 19th March 2014
The high volume production of the wafers will be used in a variety of applications. These will include the mobile, defence and military, computing and medical sectors

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