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Thursday 12th December 2013
Researchers at Northeastern University have grown GaN nanowires which represent a breakthrough in processing them for these novel uses
Thursday 12th December 2013
The two companies have signed an agreement which includes a technology license granted by Soitec to IntelliEPI. The agreement may be extended to address future business opportunities in the GaAs market, including equipment transfer
Wednesday 11th December 2013
Customers in the North Central of the U.S. will benefit from a representative agreement
Wednesday 11th December 2013
The situation is changing rapidly as advancements in CPV technology reduce costs
Wednesday 11th December 2013
SMART Low Energy Electronic Systems Group will leverage EVG 850LT in advanced compound semiconductor research for wireless ICs, power electronics, LEDs and other applications
Wednesday 11th December 2013
LEDs continue to dominate the optoelectronic components market
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Wednesday 11th December 2013
The firm's replacement process on 300mm silicon wafers envisages a possible evolution of the FinFET/trigate architecture for 7 and 5nm CMOS technologies
Wednesday 11th December 2013
Solar cells made with low-cost, nontoxic copper-based quantum dots can achieve unprecedented longevity and efficiency
Wednesday 11th December 2013
Soraa founder Nakamura honoured for GaN LED technology
Tuesday 10th December 2013
Driven by a virtuous cycle of falling prices, policy support, and energy goals, LEDs' share of lighting in China will nearly double to 18 percent in four years, Lux Research says
Monday 9th December 2013
The InGaAs/GaAsSb FET technology shows a potential use in high performance devices that operate with a very low power consumption and voltages to enable the 'Internet of Things'
Monday 9th December 2013
The company will develop environmental improvements to capture arsenic from its ore bodies that can be used in the development of gallium arsenide (GaAs)
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Friday 6th December 2013
The ChromaLit Linear phosphor component is powered by III-nitride based blue LEDs and enables fluorescent replacement in commercial and industrial lighting
Friday 6th December 2013
III-V nanowires could potentially be used in multiple applications if several problems are overcome. These applications include silicon-on-chip optical interconnects, optical transistors, integrated optoelectronics for telecoms, laser arrays and bbiological and environmental sensing
Thursday 5th December 2013
The company will take on three new Board members, while three of its current members will either retire or not stand for re-election
Thursday 5th December 2013
The new fully automated production line has an option to extend to a total of 100 MWp
Thursday 5th December 2013
Based on its III-nitride LEDs, Cree is broadening its LED street lighting portfolio with new high output options
Wednesday 4th December 2013
The firm's new 75W bulb, which uses III-nitride LED chips, delivers more light and is a convenient A19 size
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Wednesday 4th December 2013
The lighting market is predicted to increase to $11.7 billion in 2017
Wednesday 4th December 2013
Apart from the fact that silicon substrates are cheap, 8-inch CMOS semiconductor companies will find it relatively inexpensive to shift to growing gallium nitride-on-silicon LEDs. This will make GaN-on-silicon increasingly popular over LEDs grown on sapphire and SiC substrates
Wednesday 4th December 2013
Once completed, the six-building project will utilise more than 4,000 luminaires from Cree’s LED lighting portfolio
Wednesday 4th December 2013
New semiconductor technologies such as GaN (gallium nitride) and SiC (silicon carbide) are emerging to meet the greater demands of today. To meet these requirements, new test and measurement tools such as the PA1000 are needed to keep pace
Tuesday 3rd December 2013
The facility will accommodate eight two Soitec Concentrix systems which employ III-V based technology
Tuesday 3rd December 2013
The LED innovator has appointed Anne Whitaker to its Board of Directors and has taken on Norbert Hiller Executive VP, Lighting

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