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Tuesday 3rd December 2013
The Japanese firm has added another three patents and two more defendants in its patent infringement lawsuit against Everlight in the United States
Tuesday 3rd December 2013
The III-nitride based LED works with a new conversion technology allowing much thinner converter layers which better dissipate the heat
Tuesday 3rd December 2013
The EVG720 UV-NIL system provides excellent throughput and low cost of ownership with integrated soft template replication capability
Tuesday 3rd December 2013
The company's latest gallium arsenide (GaAs) and gallium nitride (GaN) improve efficiency and reduce part counts
Monday 2nd December 2013
LED lighting and Smartphone application demands have led to sapphire substrate manufacturers production expansions
Monday 2nd December 2013
Samples of the UK firm's p/n PLW114050 LED are currently available in a CCT range from 6500K to 2700K, in an industry standard 3020 package. With a drive current of 60mA, the PLW114050 has a typical forward voltage of 3.2V
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Friday 29th November 2013
The CEO of IQE has been acknowledged for his contributions to the semiconductor industry at Elektra 2013
Thursday 28th November 2013
The companies will bring together technologies to accelerate market establishment and volume production of high-reliability, high-performance gallium nitride devices
Wednesday 27th November 2013
The firms have signed an agreement which ends all outstanding legal disputes between the companies. Each company will have access to the other’s patent portfolio for SOI technologies. Research and development relating to products using SiGe, germanium or III-V materials for the fabrication of high-mobility channels for advanced generation digital applications will also be undertaken together
Wednesday 27th November 2013
Vacuum equipment is vital in the MOCVD growth of III-V semiconductors
Tuesday 26th November 2013
JDSU has won the award thanks to its close collaboration with Huawei on the development of next generation networks
Tuesday 26th November 2013
The global manufacturer of vacuum pumps and systems has signed agreements with major Russian distributor Vacuummash
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Tuesday 26th November 2013
The cell has a GaInP based top cell, a GaInAs based middle cell and a germanium bottom cell and was grown on a germanium substrate
Tuesday 26th November 2013
With dedicated local service engineers and direct sales representatives, the firm will enable OIPT to have an immediate line of communication with its customers
Friday 22nd November 2013
The financing deal is the first ever obtained from the China Development Bank for a multi-megawatt CPV project in the Xinjiang province
Friday 22nd November 2013
Working with the State of New York, Soraa will open a Buffalo, New York, semiconductor fabrication plant and employ hundreds of staff
Friday 22nd November 2013
Warren S. Stewart III has experience forging strong relationships with tier one manufacturers in the LED industry
Friday 22nd November 2013
Growing graphene on top of silicon carbide enables 3D conduction which will be necessary for the creation of more complicated nano-devices
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Friday 22nd November 2013
The company will continue to lower its dependency on general lighting chip sales where supply is exceeding demand. SemiLEDs will however broaden its component and UV product lines where pricing pressure is reduced
Thursday 21st November 2013
The CdTe (cadmium telluride) solar cell manufacturer has awarded a contract to IXL to deliver framing systems for its modules
Thursday 21st November 2013
The systems, from Oxford Instruments, will be used for nanoscale science and engineering. They will be used for advanced RIE SiNx and SiO2 etching and deposition and silicon etching
Thursday 21st November 2013
The provider of InP (indium phosphide) based Intelligent Transport Networks is celebrating this acknowledgement from the Institution of Engineering and Technology
Thursday 21st November 2013
The deployment of the InP (indium phosphide) based platform delivers long haul FlexCoherent 500 Gb/s super-channels
Thursday 21st November 2013
he EPC9106 Class D audio amplifier reference design uses gallium nitride power transistors to achieve professional quality sound with 96 percent power efficiency

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