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Tuesday 25th June 2013
The company's closing share price on 31st August 2012 was $30.46 and at the end of closing yesterday was $21.16
Tuesday 25th June 2013
The firm's InP (indium phosphide) based DTN-X platform was used to display Ethernet packet aggregation, VLAN switching, and transport of MPLS pseudo-wires with signalling of over 500G
Tuesday 25th June 2013
Devices using wide bandgap semiconductors, specifically silicon carbide and gallium nitride, will offer the greater competitive advantage in microinverters and small string inverters
Tuesday 25th June 2013
The firm's InP (indium phosphide) technology based PICs were named
Tuesday 25th June 2013
The firm is to withdraw from the magnetics sector due to EU legislation which is expected to come into force from 2017
Monday 24th June 2013
The firm will now concentrate its efforts on gallium arsenide (GaAs) based integrated opto-electronic circuits
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Monday 24th June 2013
Using MBE or MOCVD equipment, NASA Langley is seeking a facility for III-V semiconductor epilayer growth
Monday 24th June 2013
The copper indium sulphide modules have an efficiency of almost 15 percent - which is similar to polycrystalline silicon cells
Monday 24th June 2013
The organisation says the conversion efficiency of its InGaP/GaAs cell sets a world record for a two-junction solar cell measured under one-sun illumination
Friday 21st June 2013
Gallium arsenide MMICs have been used in the space pioneer's Mars campaign
Friday 21st June 2013
The firm's III-V multi-junction solar cells will be deployed to assess commercial geostationary telecommunications and scientific earth observation satellite missions
Friday 21st June 2013
Using CIGS technology, the companies will unite to brighten up life for families living in the dark
Info
Friday 21st June 2013
The room temperature tunnelling behaviour of boron nitride (BN) nanotubes has been demonstrated with the aid of gold quantum dots
Friday 21st June 2013
Analyst research firm IHS believes the total LED market for AlInGaP, GaN and other LED types will beat the $10 billion revenue reached in 2010
Thursday 20th June 2013
The firm believes its latest enhancment mode gallium nitride transistor demonstrates size reduction and efficiency enhancement for power conversion with high frequency switching
Thursday 20th June 2013
The compact Pemtron SEM systems have been designed to bridge the gap between tabletop and full size tungsten SEMs
Thursday 20th June 2013
The firm's III-nitride LEDs have been awarded by automotive supplier, Yazaki North and Central America
Wednesday 19th June 2013
The firm's PlasmaPro 100 Sapphire can be used for etching III-nitride HBLED materials and is claimed to minimise cost of ownership and maximise yield
Info
Wednesday 19th June 2013
In large-area exposure mode, the system can be used for surface annealing applications of semiconductors
Wednesday 19th June 2013
The firm says its commercial-size modules (1.09 square metres) have set a new CIGS efficiency record 15.7 percent
Wednesday 19th June 2013
The firm's concentrator triple-junction compound solar cell enables the efficient conversion of sunlight into electricity with a stack of three photo-absorption layers, the bottom most of which is made from indium gallium arsenide
Tuesday 18th June 2013
The firm's indium phosphide (InP) devices have shown that reliability is critical as operators leverage PICs for cost-effective super-channel solutions to scale Intelligent Transport Networks
Tuesday 18th June 2013
The firm's III-nitride MicroSideled 3806 offers 15,000 hours of constant output for portable device displays
Tuesday 18th June 2013
The III-V semiconductor equipment provider has received stay of suspension pending a NASDAQ hearing

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