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Tuesday 17th September 2013
A novel etching method can make the surface of indium phosphide nanowires much smoother, and with fewer imperfections
Tuesday 17th September 2013
It is possible to improve the passivation of PbS QDs by using an optimised lithium fluoride thickness
Friday 13th September 2013
The aim is to develop and manufacture TeraXion’s new modulator series and covers its InP high-speed modulators for coherent transmission systems at 100 Gb/s and more
Thursday 12th September 2013
The company's newest CPV module is certified to both IEC and UL standards
Thursday 12th September 2013
The market for phosphors and some of the critical IP are currently dominated by Mitsubishi and Denka, which have acquired nitrides and oxynitrides licenses from NIMS. But other players include Intematix, Beijing Yuji and Dow Electronics
Thursday 12th September 2013
The firm's latest gallium nitride power transistor delivers high frequency switching for exceptional performance in DC-DC power conversion
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Thursday 12th September 2013
The 8W plastic packaging power amplifier operating between the 5.2 - 5.9 GHz frequency band offers customers a small sized, fully matched solution
Thursday 12th September 2013
The indium phosphide (InP) provider of high-speed, mixed signal semiconductor solutions for the communications and computing markets has a new person on board
Thursday 12th September 2013
Oclaro will also receive $5 million for an option to sell amplifier and micro-optics business for $88 million
Wednesday 11th September 2013
The firm's III-nitride based AC-driven Acrich2 LED modules reach the equivalent luminance efficiency of DC LEDs
Wednesday 11th September 2013
Gallium nitride devices for efficient power electronics can handle currents of up to 100 A and breakdown voltages beyond 600 V
Tuesday 10th September 2013
The firm's gallium arsenide based device is Ideal for microwave radio, SATCOM & sensor applications
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Tuesday 10th September 2013
The firm has accomplished this with its indium phosphide (InP) based Super-Channel SD-FEC
Tuesday 10th September 2013
Cree's CR series of III-nitride based troffers deliver improved light quality with an estimated 52 percent savings in energy costs
Tuesday 10th September 2013
The doped wires enable LED tuning at precise frequencies for commercial applications
Tuesday 10th September 2013
A new discovery could enhance optoelectronic devices and solar cell performance
Tuesday 10th September 2013
The firm's III-nitride based LED bulbs are suitable for use in 60W replacement bulbs
Monday 9th September 2013
The solar industry innovators have launched a JV to fulfil projects in Europe, North Africa and US
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Monday 9th September 2013
A new method to grow germanium crystals at low temperatures may lead to next-generation large-scale integrated circuits and future flexible electronics
Friday 6th September 2013
The two professors from the Russian university will be awarded for their semiconductor compounds with superior efficiencies and increased lifetime
Friday 6th September 2013
The manufacturer of III-V subsystems and components for fibre optic communications is celebrating its latest results
Friday 6th September 2013
With a new connection, the overall efficiency of solar energy devices, including GaAs based ones, can reduce the cost of solar energy production
Friday 6th September 2013
Turning on a light, a composite can change from a metal to a material that partly conducts current

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