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Tuesday 26th November 2013
JDSU has won the award thanks to its close collaboration with Huawei on the development of next generation networks
Tuesday 26th November 2013
The global manufacturer of vacuum pumps and systems has signed agreements with major Russian distributor Vacuummash
Tuesday 26th November 2013
The cell has a GaInP based top cell, a GaInAs based middle cell and a germanium bottom cell and was grown on a germanium substrate
Tuesday 26th November 2013
With dedicated local service engineers and direct sales representatives, the firm will enable OIPT to have an immediate line of communication with its customers
Friday 22nd November 2013
The financing deal is the first ever obtained from the China Development Bank for a multi-megawatt CPV project in the Xinjiang province
Friday 22nd November 2013
Working with the State of New York, Soraa will open a Buffalo, New York, semiconductor fabrication plant and employ hundreds of staff
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Friday 22nd November 2013
Warren S. Stewart III has experience forging strong relationships with tier one manufacturers in the LED industry
Friday 22nd November 2013
Growing graphene on top of silicon carbide enables 3D conduction which will be necessary for the creation of more complicated nano-devices
Friday 22nd November 2013
The company will continue to lower its dependency on general lighting chip sales where supply is exceeding demand. SemiLEDs will however broaden its component and UV product lines where pricing pressure is reduced
Thursday 21st November 2013
The CdTe (cadmium telluride) solar cell manufacturer has awarded a contract to IXL to deliver framing systems for its modules
Thursday 21st November 2013
The systems, from Oxford Instruments, will be used for nanoscale science and engineering. They will be used for advanced RIE SiNx and SiO2 etching and deposition and silicon etching
Thursday 21st November 2013
The provider of InP (indium phosphide) based Intelligent Transport Networks is celebrating this acknowledgement from the Institution of Engineering and Technology
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Thursday 21st November 2013
The deployment of the InP (indium phosphide) based platform delivers long haul FlexCoherent 500 Gb/s super-channels
Thursday 21st November 2013
he EPC9106 Class D audio amplifier reference design uses gallium nitride power transistors to achieve professional quality sound with 96 percent power efficiency
Wednesday 20th November 2013
The EVG PHABLE combines sub-micron resolution of lithography steppers with low cost of ownership and ease of use of proximity aligners for LEDs and other photonic components
Wednesday 20th November 2013
The gallium arsenide device simplifies production and improves performance of direct broadband satellite receiver modules
Wednesday 20th November 2013
Blue superluminescent diodes deliver 200 mW of power
Wednesday 20th November 2013
The system can be used for wafer sizes of 150 mm or 200 mm
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Wednesday 20th November 2013
The firm uses Boeing's semiconductor bonding technology which could be be used to power high-power spacecraft and unmanned aerial vehicles
Tuesday 19th November 2013
This is the first time 1Tb/s of transmission capacity will be deployed on SCinet's network, delivered with the Infinera indium phosphide based DTN-X platform
Tuesday 19th November 2013
The compact module combines three colours and an independent phosphor-coated III-nitride white emitter, into a single LED package and simplifies colour mixing and integration
Tuesday 19th November 2013
Of these options, 42.6 percent were granted to technical staff related to the POET effort and 57.4 percent to the company’s officers not including directors
Tuesday 19th November 2013
The firm has developed a platform based on GaN on GaN technology that provides on-the-fly flexibility. By adding a simple accessory beam spreads, colour temperature, and CCT can be adjusted
Monday 18th November 2013
The firm will use the cash to develop gallium nitride substrates for use in space electronics

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