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Monday 23rd September 2013
Bandgap materials GaN and SiC are generating significant buzz globally. Strategy Analytics expects SiC to be the primary replacement technology for silicon power devices, while GaN seeks initial commercial traction in applications with breakdown voltages of less than < 600V and power requirements of less than 5kW
Monday 23rd September 2013
The new variant of the III-nitride based LED Osram Ostar Headlamp Pro enables the simple implementation of Advanced Forward Lighting Systems
Monday 23rd September 2013
The compact indium phosphide (InP) PIC narrow linewidth μITLA and compact ICR enable higher port density on 100G and above coherent line cards and transponders
Monday 23rd September 2013
The expansion boosts the firm's internal assembly and advanced flip chip capabilities
Monday 23rd September 2013
Scrutinising samples with several microscopes reveals the presence of anti-phase boundaries in GaP that jump from one atomic plane to another
Friday 20th September 2013
The firm's new silicon carbide MOSFETs provide higher efficiency, power density and lower system BOM for power conversion systems
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Friday 20th September 2013
The latest indium phosphide micro-iTLA tuneable form factor enables next generation 100G coherent networks
Friday 20th September 2013
MACOM has agreed to make a one-time settlement payment of $7.25 million to GigOptix and each company has agreed to dismiss all suits against the other
Friday 20th September 2013
The latest III-nitride modules are suited to retail lighting and have an interchangeable, Zhaga-compliant mounting socket
Thursday 19th September 2013
The cash will be used to bring the gallium arsenide (GaAs) based Solink technology, to the next stage of development. The firm's high efficiency photovoltaic ink will increase efficiency of solar modules by up to 25 percent
Thursday 19th September 2013
The new gallium nitride power transistor delivers high frequency switching for exceptional performance in DC-DC power conversion and Class D Audio applications
Thursday 19th September 2013
The firm's latest silicon carbide power device is suited to power factor correction circuits, photovoltaic inverters and uninterruptible power supplies
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Thursday 19th September 2013
The CXA high-density III-nitride based arrays enable the next generation of LED spot lights
Thursday 19th September 2013
The move to gallium nitride-on-silicon carbide is to reduce platform cost and address growth opportunities in power applications
Thursday 19th September 2013
The compact Osram III-nitride based LED is suited for automotive headlights now comes with two chips for greater brightness
Thursday 19th September 2013
The wireless communications market accounts for a whopping 85 percent of the group's sales
Wednesday 18th September 2013
Etching a sacrificial GaN layer with oxalic acid boosts LED light extraction
Wednesday 18th September 2013
Cooperation between the firms will accelerate development of a cost efficient solution for large area ALD in the thin film PV & display market
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Wednesday 18th September 2013
The integrated company will accelerate III-nitride LED technology development and market expansion
Wednesday 18th September 2013
The internally-matched gallium nitride-on-silicon carbide pulsed device provides high gain, efficiency and ruggedness over the 1030 to 1090 MHz bandwidth
Wednesday 18th September 2013
Tensile-strained germanium tin (GeSn) MOSFET devices on silicon have been developed using solid phase epitaxy
Tuesday 17th September 2013
The firm says over the past two weeks many customers in multiple nations have said that Kyma has by far the best aluminium nitride templates on the market
Tuesday 17th September 2013
GaN Systems will explain how technology and trends in wide-bandgap gallium nitiride devices means smaller, lighter and more efficient electronics
Tuesday 17th September 2013
While cost may not be the advantage, its innovative character may lead to new insights of using silicon carbide as an optoelectronic material

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