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Monday 9th December 2013
The InGaAs/GaAsSb FET technology shows a potential use in high performance devices that operate with a very low power consumption and voltages to enable the 'Internet of Things'
Monday 9th December 2013
The company will develop environmental improvements to capture arsenic from its ore bodies that can be used in the development of gallium arsenide (GaAs)
Friday 6th December 2013
The ChromaLit Linear phosphor component is powered by III-nitride based blue LEDs and enables fluorescent replacement in commercial and industrial lighting
Friday 6th December 2013
III-V nanowires could potentially be used in multiple applications if several problems are overcome. These applications include silicon-on-chip optical interconnects, optical transistors, integrated optoelectronics for telecoms, laser arrays and bbiological and environmental sensing
Thursday 5th December 2013
The company will take on three new Board members, while three of its current members will either retire or not stand for re-election
Thursday 5th December 2013
The new fully automated production line has an option to extend to a total of 100 MWp
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Thursday 5th December 2013
Based on its III-nitride LEDs, Cree is broadening its LED street lighting portfolio with new high output options
Wednesday 4th December 2013
The firm's new 75W bulb, which uses III-nitride LED chips, delivers more light and is a convenient A19 size
Wednesday 4th December 2013
The lighting market is predicted to increase to $11.7 billion in 2017
Wednesday 4th December 2013
Apart from the fact that silicon substrates are cheap, 8-inch CMOS semiconductor companies will find it relatively inexpensive to shift to growing gallium nitride-on-silicon LEDs. This will make GaN-on-silicon increasingly popular over LEDs grown on sapphire and SiC substrates
Wednesday 4th December 2013
Once completed, the six-building project will utilise more than 4,000 luminaires from Cree’s LED lighting portfolio
Wednesday 4th December 2013
New semiconductor technologies such as GaN (gallium nitride) and SiC (silicon carbide) are emerging to meet the greater demands of today. To meet these requirements, new test and measurement tools such as the PA1000 are needed to keep pace
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Tuesday 3rd December 2013
The facility will accommodate eight two Soitec Concentrix systems which employ III-V based technology
Tuesday 3rd December 2013
The LED innovator has appointed Anne Whitaker to its Board of Directors and has taken on Norbert Hiller Executive VP, Lighting
Tuesday 3rd December 2013
The Japanese firm has added another three patents and two more defendants in its patent infringement lawsuit against Everlight in the United States
Tuesday 3rd December 2013
The III-nitride based LED works with a new conversion technology allowing much thinner converter layers which better dissipate the heat
Tuesday 3rd December 2013
The EVG720 UV-NIL system provides excellent throughput and low cost of ownership with integrated soft template replication capability
Tuesday 3rd December 2013
The company's latest gallium arsenide (GaAs) and gallium nitride (GaN) improve efficiency and reduce part counts
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Monday 2nd December 2013
LED lighting and Smartphone application demands have led to sapphire substrate manufacturers production expansions
Monday 2nd December 2013
Samples of the UK firm's p/n PLW114050 LED are currently available in a CCT range from 6500K to 2700K, in an industry standard 3020 package. With a drive current of 60mA, the PLW114050 has a typical forward voltage of 3.2V
Friday 29th November 2013
The CEO of IQE has been acknowledged for his contributions to the semiconductor industry at Elektra 2013
Thursday 28th November 2013
The companies will bring together technologies to accelerate market establishment and volume production of high-reliability, high-performance gallium nitride devices
Wednesday 27th November 2013
The firms have signed an agreement which ends all outstanding legal disputes between the companies. Each company will have access to the other’s patent portfolio for SOI technologies. Research and development relating to products using SiGe, germanium or III-V materials for the fabrication of high-mobility channels for advanced generation digital applications will also be undertaken together
Wednesday 27th November 2013
Vacuum equipment is vital in the MOCVD growth of III-V semiconductors

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