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Monday 30th September 2013
The AURP has honoured Emcore for its III-v solar cell technology development
Friday 27th September 2013
The US Department of Energy has provided the funding to the firms to design power-saving GaN (gallium nitride) and SiC (silicon carbide) semiconductors for next generation vehicles
Friday 27th September 2013
The CdTe (cadmium telluride) solar cell manufacturer will design and build the project in the 2,000-acre segment of the Moapa Band of Paiutes tribal land
Friday 27th September 2013
The firm received many of its orders from Research laboratories
Friday 27th September 2013
The firm's latest SiC (silicon carbide) - based LEDs follow on from the XQ series launched in May and are 78 percent smaller than Cree's XP-E2 modules
Thursday 26th September 2013
The packaged LED market will balloon from $13.9 billion in 2013 to $16 billion by 2018, driven mainly by general lighting and completed by display applications
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Thursday 26th September 2013
A novel modular, SMT-optimised approach unlocks the full promise of gallium nitride in plastic for radar applications
Thursday 26th September 2013
The new Praxair China Technology Centre is a state-of-the-art facility for applications engineers and Research and Development
Thursday 26th September 2013
The aluminium nitride templates, produced using HVPE, have been sold to a major Asian LED manufacturer
Thursday 26th September 2013
With this board space reduction, network infrastructure OEMs can reduce the size of radio systems and their bills of materials
Wednesday 25th September 2013
A collaborative project set up by the German Ministry will develop gallium nitride power devices for applications in aeronautics and communications electronics
Wednesday 25th September 2013
As the number of the cascaded LEDs increases, efficiency droop is greatly reduced
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Wednesday 25th September 2013
The indium arsenide antenna arrays enable the detection of small volumes of materials with a standard infrared spectrometer
Wednesday 25th September 2013
In the high-power LUXEON Q III-nitride device, high flux and high efficacy are achieved in a standard 3535 surface-mount package
Wednesday 25th September 2013
Celebrate 10 Years of Success Together With LED Industry’s Largest Event
Wednesday 25th September 2013
The miniature devices are composed of Oclaro's Opbext aluminium indium gallium phosphide (AlInGaP) and aluminium gallium arsenide (AlGaAs) laser diodes with externally adjustable optics. They also incorporate a Panasonic aspherical glass lens in a rugged modular anodised aluminium housing
Wednesday 25th September 2013
The 3.8mm diameter super-bright device delivers more power but uses less energy. This is thanks to new processes, including an optimised waveguide structure and fine-tuning of the laser device structural parameters
Tuesday 24th September 2013
The modified III-V structure has four solar subcells and was grown using a new technology. The process allows the connection of two semiconductor crystals, which otherwise cannot be grown on top of each other with high crystal quality
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Tuesday 24th September 2013
Suitable for use in lasers, a novel preparation method of cadmium telluride quantum disks can leads to more stable nanocrystals compared to conventional preparation methods. Tuning the shape of the disks can strongly improve conditions for lasing or single-photon emission
Tuesday 24th September 2013
MBD has increased the reach of its indium phosphide DTNX platform to new high-bandwidth sites in DC and Virginia
Tuesday 24th September 2013
When combined with red nitride or other red phosphors, arrangements also covered by these patents, CRIs up to 98 (out of 100) have been demonstrated. The firm's latest technology is also instrumental to meeting new standards such as California’s Quality LED Lamp Specification
Monday 23rd September 2013
Bandgap materials GaN and SiC are generating significant buzz globally. Strategy Analytics expects SiC to be the primary replacement technology for silicon power devices, while GaN seeks initial commercial traction in applications with breakdown voltages of less than < 600V and power requirements of less than 5kW
Monday 23rd September 2013
The new variant of the III-nitride based LED Osram Ostar Headlamp Pro enables the simple implementation of Advanced Forward Lighting Systems
Monday 23rd September 2013
The compact indium phosphide (InP) PIC narrow linewidth μITLA and compact ICR enable higher port density on 100G and above coherent line cards and transponders

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