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Monday 30th December 2013
The gallium nitride SPICE chips are incorporated in NI's Multisim 13.0 software, which is designed to improve power system efficiency and reduce final product size and development time
Sunday 29th December 2013
The silicon carbide 3.3kV, 1,500A inverter is suitable for high power trains
Sunday 29th December 2013
P+E HEMS hydrogen quality analysers will detect trace contaminant and alert operators at III-V fabs in Taiwan and China
Friday 27th December 2013
Seoul Semiconductor was again selected as the only LED manufacturer in the Top 20 2013 IEEE Semiconductor Manufacturing Patent Power Ranking
Monday 23rd December 2013
A high-performance gate dielectric can be formed with a stack of interleaving La2O3 and HfO2 layers that are subsequently annealed at 500 °C.
Monday 23rd December 2013
: The exchange of this debt to equity is a move in Oclaro's recent restructuring efforts
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Wednesday 18th December 2013
With EpiTriple TT and AbsoluT, temperature calibration of all three heating zones of an MOCVD showerhead reactor can be achieved
Wednesday 18th December 2013
The company has launched a media campaign targeting the southern California region
Wednesday 18th December 2013
The developer of optical inspection tools for the semiconductor industry is being backed by Founders Fund and taken on Peter Thiel in its Board of Directors
Wednesday 18th December 2013
A single-particle study identifies a possible path to improved conversion of sunlight to electricity in photovoltaic devices and LEDs
Wednesday 18th December 2013
The partnership focuses on advanced engineered substrates and materials for LEDs and solar cells
Monday 16th December 2013
While technical progress is still the greatest challenge, China's chip market is dominated by LEDs
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Friday 13th December 2013
Researchers have demonstrated an InGaAs/GaAsSb broken-gap tunnel field effect transistor where the energy barrier was close to zero
Friday 13th December 2013
The Riber MBE412 system sold to the IES offers a technique for processing 4-inch substrates for the controlled development of III-V semiconductor-based nanostructures
Thursday 12th December 2013
Researchers at Northeastern University have grown GaN nanowires which represent a breakthrough in processing them for these novel uses
Thursday 12th December 2013
The two companies have signed an agreement which includes a technology license granted by Soitec to IntelliEPI. The agreement may be extended to address future business opportunities in the GaAs market, including equipment transfer
Wednesday 11th December 2013
Customers in the North Central of the U.S. will benefit from a representative agreement
Wednesday 11th December 2013
The situation is changing rapidly as advancements in CPV technology reduce costs
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Wednesday 11th December 2013
SMART Low Energy Electronic Systems Group will leverage EVG 850LT in advanced compound semiconductor research for wireless ICs, power electronics, LEDs and other applications
Wednesday 11th December 2013
LEDs continue to dominate the optoelectronic components market
Wednesday 11th December 2013
The firm's replacement process on 300mm silicon wafers envisages a possible evolution of the FinFET/trigate architecture for 7 and 5nm CMOS technologies
Wednesday 11th December 2013
Solar cells made with low-cost, nontoxic copper-based quantum dots can achieve unprecedented longevity and efficiency
Wednesday 11th December 2013
Soraa founder Nakamura honoured for GaN LED technology
Tuesday 10th December 2013
Driven by a virtuous cycle of falling prices, policy support, and energy goals, LEDs' share of lighting in China will nearly double to 18 percent in four years, Lux Research says

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