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Thursday 3rd October 2013
The firm's latest gallium nitride based optical and base station modules enhance RF amplifiers
Wednesday 2nd October 2013
Working with Rice University, a new funded program will leverage Daylight Solutions’ innovative imaging technology, and apply it to new methods for detecting cancer
Wednesday 2nd October 2013
The firm's X-Band Core Chip combines a CMOS logic driver with a gallium arsenide transmit/receive MMIC within a single QFN package
Wednesday 2nd October 2013
The firm has developed III-nitride LED technology to provide consumers with practical solutions that are accessible, flexible and intuitive
Wednesday 2nd October 2013
The roadmap to even higher efficiencies has also been revealed with an R&D demonstration module exhibiting 37.1 percent efficiency
Wednesday 2nd October 2013
The joint development of a PVB film for photovoltaic module encapsulation with AIST has led to superior long-lasting durability and a frameless, thinner design
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Wednesday 2nd October 2013
A 1 µm diameter micropillar composed of a GaAs layer sandwiched between two 'Bragg stacks' made from alternating layers of GaAs and AlAs emits a single photon exactly at a desired moment in time
Wednesday 2nd October 2013
The firm's bulb based on III-nitride chip technology has receives ENERGY STAR qualification and is now even more affordable thanks to utility rebates
Wednesday 2nd October 2013
The firm's silicon carbide (SiC) based enhanced SC³ technology platform drives performance up and system cost down
Wednesday 2nd October 2013
The market research firm says 2012 gallium arsenide device revenues hit $5.3 billion with additional growth anticipated in the immediate future. On the down side, a weak demand for MBE, and particularly MOCVD grown GaAs epitaxial substrates will adversely affect the device market in the longer term
Tuesday 1st October 2013
The firm's gallium arsenide (GaAs) based 850 nm infrared Dragon Dome LEDs will have a usable range of more than 100 metres, depending on the sensitivity and field of view of the camera
Tuesday 1st October 2013
The firm's source system features integrated heating and control useful in LED and solar cell growth
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Tuesday 1st October 2013
The baSiC-T tool is suited for the growth of silicon carbide for high-performance electronics
Tuesday 1st October 2013
The firm has shipped its QDEF devices to LCD manufacturers to bring perfect colour and high energy efficiency to millions of devices
Tuesday 1st October 2013
New low-heat, high-efficiency white lighting LD options could avoid the droop issue associated with LEDs
Tuesday 1st October 2013
Infineon has still maintained leadership in this sector
Monday 30th September 2013
The AURP has honoured Emcore for its III-v solar cell technology development
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Friday 27th September 2013
The US Department of Energy has provided the funding to the firms to design power-saving GaN (gallium nitride) and SiC (silicon carbide) semiconductors for next generation vehicles
Friday 27th September 2013
The CdTe (cadmium telluride) solar cell manufacturer will design and build the project in the 2,000-acre segment of the Moapa Band of Paiutes tribal land
Friday 27th September 2013
The firm received many of its orders from Research laboratories
Friday 27th September 2013
The firm's latest SiC (silicon carbide) - based LEDs follow on from the XQ series launched in May and are 78 percent smaller than Cree's XP-E2 modules
Thursday 26th September 2013
The packaged LED market will balloon from $13.9 billion in 2013 to $16 billion by 2018, driven mainly by general lighting and completed by display applications
Thursday 26th September 2013
A novel modular, SMT-optimised approach unlocks the full promise of gallium nitride in plastic for radar applications

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