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Thursday 7th December 2017
Toshiba describes process for reducing impurities in the gate dielectric of GaN MOSFETs at IEDM
Thursday 7th December 2017
Fujitsu indicates that using this technology for heat dissipation allows high-efficiency cooling of high-power gallium nitride (GaN) high-electron-mobility transistors (HEMTs), enabling stable operations of power amplifiers at high power levels.
Wednesday 6th December 2017
Japanese university to use MBE system for compound semiconductor microstucture research
Wednesday 6th December 2017

Rensselaer Polytechnic Institute study demonstrates high yields and nutritional quality of leafy greens with SunPlus LEDs

Wednesday 6th December 2017

Quantum waltz of electrons hints at the next generation of chips

Wednesday 6th December 2017

Knowledge sharing will ensure open access to high volume PIC packaging through PIXAPP Pilot Line

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Wednesday 6th December 2017

Prototype transmit/receive module on single 6x6 mm chip will deliver miniaturised space radar systems for future missions

Wednesday 6th December 2017
German consortium aims to produce first high power AlGaN-based UV-C and UV-B LEDs by 2020
Wednesday 6th December 2017
Air Force Research Laboratory researchers use boron nitride to transfer GaN circuits to flexible substrates
Wednesday 6th December 2017
CMOS compatibility with silicon photonics lowers fabrication costs and provides access to mature and large-scale facilities
Wednesday 6th December 2017
XLamp XD16 LED first to surpass 280 lm/mm2 lumen density
Tuesday 5th December 2017
Mitsubishi and University of Tokyo are first to quantify electron scattering mechanisms in SiC power devices to reduce energy consumption
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Tuesday 5th December 2017
Researchers have made a fully transparent thin-film transistor consisting of a MoS2 monolayer; HfO2, which is used for coating; and aluminum-doped zinc oxide (AZO) contacts
Monday 4th December 2017

Imec's Ga-doped Ge-rich source/drain contacts are promising for suppressing parasitic source/drain resistance in advanced pMOS devices

Monday 4th December 2017
GALOIS Series uses bright-field confocal optics, enabling high-speed inspection of various kinds of GaN wafer defects and high-resolution observation of defect images
Monday 4th December 2017

Japan Aerospace Exploration Agency places third order superlight thin-film solar panel for Jupiter deployment demo

Friday 1st December 2017
Parent company of III-V foundry CST GLobal starts trading shares on Nordic trading facility
Friday 1st December 2017

Company to exhibit technologies for a new generation of mobile and consumer power solutions

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Friday 1st December 2017
Full SiC power modules will support further improvements in electric-powered car’s performance under racing conditions
Thursday 30th November 2017

Researchers show how the interface polarisation of III-nitride heterojunctions can be engineered by employing BAlN and BGaN alloys

Thursday 30th November 2017

World’s first series production car with autonomous driving features uses SiGe RASIC chips in the front and corner radar

Thursday 30th November 2017
US team develops new class of cybersecurity primitives around the structural randomness of 2D semiconductor MoS2
Thursday 30th November 2017

Ultra-fast transition eGaN FETs can enhance LiDAR accuracy, precision, and processing speed

Wednesday 29th November 2017

Perovskite-based device dynamically responds to sunlight by transforming from transparent to tinted while converting sunlight into electricity


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