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Wednesday 13th December 2017

IR light emitters and cameras are helping to create a better driving and passenger experience

Wednesday 13th December 2017
Award will enable Finisar to exponentially increase R&D spending and high-volume VCSEL production in Texas
Wednesday 13th December 2017
MOCVD equipment firm says it is confident of long-term growth prospects
Tuesday 12th December 2017

EVG810LT plasma activation system enables low-temperature direct wafer bonding of III-V materials and germanium-on-silicon wafers

Tuesday 12th December 2017
EPC will demonstrate a desktop that can power multiple devices anywhere on the surface up to a power consumption of 300W
Monday 11th December 2017

KABRA!zen laser slicing technology improves throughput by 50 percent

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Monday 11th December 2017
Manufacturer of synthetic sapphire gets highest grade supplier approval classification
Monday 11th December 2017
GaN Systems plans to use the funding to expand sales and accelerate product innovation
Friday 8th December 2017
Company proceeds towards trial against SGL and plans to appeal against AMEC's patent counter ciaim
Friday 8th December 2017

High voltage vertical transistor design could drastically reduce energy waste

Friday 8th December 2017
Company looks forward to ramping up Texas VCSEL array production facility next year
Friday 8th December 2017
Asia-Pacific region is expected to witness the fastest growth for GaN semiconductor devices during the period from 2016 to 2024
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Friday 8th December 2017
A new UK project, CS-MAGIC, is set to thrust wide bandgap magnetic field sensors into the commercial limelight, reports Rebecca Pool.
Thursday 7th December 2017
Bonding single-crystal diamond to a SiC substrate at room temperature dissipates power in GaN HEMTs to increase radar range
Thursday 7th December 2017

Focus Lightings orders multiple TurboDisc EPIK 868 systems to boost production

Thursday 7th December 2017
Toshiba describes process for reducing impurities in the gate dielectric of GaN MOSFETs at IEDM
Thursday 7th December 2017
Fujitsu indicates that using this technology for heat dissipation allows high-efficiency cooling of high-power gallium nitride (GaN) high-electron-mobility transistors (HEMTs), enabling stable operations of power amplifiers at high power levels.
Wednesday 6th December 2017
Japanese university to use MBE system for compound semiconductor microstucture research
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Wednesday 6th December 2017

Rensselaer Polytechnic Institute study demonstrates high yields and nutritional quality of leafy greens with SunPlus LEDs

Wednesday 6th December 2017

Quantum waltz of electrons hints at the next generation of chips

Wednesday 6th December 2017

Knowledge sharing will ensure open access to high volume PIC packaging through PIXAPP Pilot Line

Wednesday 6th December 2017

Prototype transmit/receive module on single 6x6 mm chip will deliver miniaturised space radar systems for future missions

Wednesday 6th December 2017
German consortium aims to produce first high power AlGaN-based UV-C and UV-B LEDs by 2020
Wednesday 6th December 2017
Air Force Research Laboratory researchers use boron nitride to transfer GaN circuits to flexible substrates

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