SemiQ launches Gen3 1200V modules
SemiQ Inc, a developer of SiC solutions, has announced an expansion of its third-generation QSiC MOSFET product line, including devices with what it claims are industry-leading current density and thermal resistance.
Seven devices have been launched, including high-current S3 half-bridge, B2T1 six-pack and B3 full-bridge packages.
This expansion addresses the growing demand for ultra-efficient conversion in high-power systems, and features devices engineered for current capabilities of up to 608A and a junction-to-case thermal resistance of 0.07ºC/W (in the 62 mm standard S3 half-bridge format).
The six-pack modules integrate the three-phase power stage into a compact housing and have an RDSon range of 19.5 to 82mΩ. They are designed to optimize layout and minimise parasitics in motor drives and advanced AC-DC converters.
The full-bridge modules deliver high current capabilities of up to 120A and an ultra-low on-resistance down to 8.6mΩ. This combination, coupled with a low thermal resistance of 0.28ºC/W, maximises power density and efficiency in single-phase inverters and high-voltage DC-DC systems.
All parts are screened using wafer-level gate-oxide burn-in tests to guarantee the gate oxide quality. They are also breakdown voltage tested to over 1350 V. Modules using these third-generation chips operate at lower gate voltages than previous generations as a result of the 18 V/-4.5 V gate voltage of the third-generation chips. SemiQ’s Gen3 technology reduces both RONsp and turn off energy losses (EOFF) by up to 30 percent versus previous generations, according to the company.
