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Wednesday 23rd January 2013
Infinera's indium phosphide (InP) PICs have crossed 4,200 km across the Pacific
Wednesday 23rd January 2013
The company says the €27.4 million in revenues for 2012 were in line with objectives
Tuesday 22nd January 2013
The executive transformed the company into one that produces gallium nitride based power technologies and products
Tuesday 22nd January 2013
KaiStar, a JV between Epistar and Shenzhen Kaifa Technology will add to its existing fleet of Veeco MOCVD systems as part of its 2013 LED capacity expansion plan
Tuesday 22nd January 2013
This is according to market research firm Five Star Equities report which focuses on SemiLEDs and Veeco Instruments
Tuesday 22nd January 2013
This will add to the firm's capabilities for over 100G deployment and strengthen the firm for high speed telecom and datacom applications
Info
Monday 21st January 2013
The company says its III-nitride XSP2L LED is the ideal replacement for outdated high-pressure sodium and metal-halide fixtures up to 400 watts
Monday 21st January 2013
The reactor will be used for a new nano research centre
Monday 21st January 2013
The photodiodes are made from a range of III-phosphides, arsenides, nitrides and silicon carbide
Monday 21st January 2013
The firm has promoted Rex Jackson as executive VP and CFO and appointed Susan Spradley as SVP and GM of the Communications Test and Measurement Business segment
Monday 21st January 2013
The company says it has developed a light output density of more than 300 W/cm2, the highest recorded for a commercially available LED type device
Friday 18th January 2013
The research institute says it has achieved a new world record for (copper indium gallium (di)selenide) solar efficiency
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Friday 18th January 2013
Firecomms' new fibre optic transceivers are suited to industrial automation, transportation and medical markets
Friday 18th January 2013
Despite this positive sign the situation of the global PV industry remains critical and a substantial recovery of the supply-demand balance is not expected to occur before the second half of 2013
Thursday 17th January 2013
The company is now manufacturing a 0.06W UV III-nitride LED for consumer applications
Thursday 17th January 2013
The gallium nitride power transistors are optimised for efficiency and offer lower overall system costs
Wednesday 16th January 2013
The new silicon carbide products offer industrial and extended temperature ranges
Wednesday 16th January 2013
The tool is designed for reactive process monitoring
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Wednesday 16th January 2013
III-nitride LED packaging will drive new technology and design adoption
Wednesday 16th January 2013
The halogen replacement lamps use gallium nitride (GaN) chip technology
Wednesday 16th January 2013
Conference speakers from Osram, Philips, Bridgelux, Veeco will participate in one of the largest exhibitions and conferences in the world dedicated to LED technology and manufacturing
Wednesday 16th January 2013
Plant Engineering China has recognised the Spectra-G 3000 in the "Environmental Health" category for its role in LED production
Tuesday 15th January 2013
Microsemi, a provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced the availability of a new generation of industrial temperature, silicon carbide (SiC) standard power modules. They are ideally suited for use in high power switch mode power supplies, motor drives, uninterruptible power supplies, solar inverters, oil exploration and other high power, high voltage industrial applications requiring high performance and reliability. The power module family is also offered with extended temperature ranges to meet next-generation power conversion system requirements for higher power densities, operating frequencies and efficiencies.
Tuesday 15th January 2013
Grown on indium phosphide (InP), the cell is based on the band structure of InAlAsSb used in detector and laser applications

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