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Monday 4th June 2018
New production building at the Apollo Plant in Chikugo, Japan, is intended to meet the growing demand for SiC power devices
Thursday 31st May 2018
Compound semiconductor makers are moving to Solstice platform for its flexibility and price, says CEO
Thursday 31st May 2018
Company reports gross profit of 60.2 percent for the first quarter ended March 31, 2018
Thursday 31st May 2018
AEC-Q101 qualified device features a GaAlAs infrared emitting diode optically coupled to a silicon phototransistor
Thursday 31st May 2018
Class 4 wireless power kit can transmit up to 33 W while operating at 6.78 MHz
Wednesday 30th May 2018
Enables high current, high switching frequency and high efficiency for SiC power modules
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Wednesday 30th May 2018
SMI will partner with Michigan Technological University to advance electro optic phase modulator technology through improving accuracy, energy consumption, and durability
Wednesday 30th May 2018
Chinese start-up says it can produce entire uncracked 100 mm GaN wafers and has plans to offer larger sizes next year
Wednesday 30th May 2018
Company to highlight enhancements to its GaN epiwafer solutions for RF power and power switching at IMS 2018 and at PCIM Europe
Wednesday 30th May 2018
PerfectWhite technology delivers without infra-red, without green/yellow tint, and without ultraviolet radiation
Tuesday 29th May 2018
Silicon breakthrough could make microwave technology much cheaper and better, say researchers at the University of Waterloo
Tuesday 29th May 2018
Luminus enters UV-C LED disinfection and sterilisation segment
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Tuesday 29th May 2018
Featured devices include 60W Power Doherty module for next generation wireless basestations and the industry’s first GaN-on-silicon based RF energy toolkit
Tuesday 29th May 2018
From left to right: 1) optical images of MoS2 ribbons grown on a NaCl crystal, 2) optical microscopy and corresponding AFM topography and phase images of a ribbon, and 3) optical image of the ribbons transferred onto a SiO2/Si substrate.
Sunday 27th May 2018
Spirit Electronics now provides distribution support to assist defence and aerospace customers in adopting eGaN FETs and ICs for power conversion systems
Sunday 27th May 2018
Company to show next-generation 1200 V SiC MOSFET and 700V SBDs at PCIM Europe
Saturday 26th May 2018
Fully-Matched, 5 to 6 GHz RF power transistor offers 25 watts of power for C-band, continuous wave applications
Friday 25th May 2018
Indian Institute of Technology, Bombay, has ordered a Model Compact 21T MBE system to develop new optoelectronic devices
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Friday 25th May 2018
Five-Star Supplier Excellence Award recognises outstanding service and partnership
Thursday 24th May 2018
Brookhaven scientists show that scanning photocurrent microscopy could provide the information needed to improve the performance of devices for power generation, communications, data storage, and lighting
Wednesday 23rd May 2018
VCSEL add-on to EpiTT and EpiCurve TT enables high-yield manufacturing of complex multi-layer device structures
Wednesday 23rd May 2018
Binary switching device could have applications from optical interconnects to solar cells, say researchers
Wednesday 23rd May 2018
Company to show record-setting GaN transistors and new design tools and reference designs
Wednesday 23rd May 2018
Company will feature hIgh density power conversion for computers and cars, as well as high frequency applications using eGaN FETs and ICs

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