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Thursday 21st June 2012
By using a {20-21} semi-polar gallium nitride substrate, adjusting crystal growth, wafer processing, and laser production processes, a joint venture has developed a true green laser diode
Wednesday 20th June 2012
The devices expand the company's portfolio of radio chipsets targeting cellular backhaul and other markets and rely on the firm's gallium arsenide pHEMT technology
Wednesday 20th June 2012
Wang has been working in the semiconductor industry in the US and China for many years and most recently held the position of Regional President of Novellus Systems in China
Wednesday 20th June 2012
The 10 GHz gallium nitride device reduces chip footprint by over 90%, enabling more compact radars and wireless communications equipment
Wednesday 20th June 2012
The new gallium nitride-on silicon amplifier achieves a conversion efficiency rating of 70%
Wednesday 20th June 2012
The firm claims the two devices deliver the lowest noise figure of any integrated, packaged solutions for base station and similar applications
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Wednesday 20th June 2012
The firm has developed a family of singlechip multiple-input receiver MMICs and transmitter MMICs (or transceivers), which incorporate gallium arsenide 3-D MMIC chip technology
Wednesday 20th June 2012
The improved gain of the new gallium arsenide devices will help microwave designers reduce the number of parts in their overall system
Wednesday 20th June 2012
The firm's CIGS technology is being used to harness sunlight into charging the latest smartphones. Ascent will debut its chargers in Asia in early August
Tuesday 19th June 2012
The MMDS25254H 2300-2700 MHz device employs a gallium arsenide MMIC and indium gallium phosphide HBT technology
Tuesday 19th June 2012
Sandia's latest development shows that indium gallium nitride may increase the conversion percentage of the sun’s frequencies and permits flexible energy absorption
Tuesday 19th June 2012
In the long term, LEDs for lighting should overtake the CFL lamp market despite the fact that CFLs are currently the most economical choice
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Tuesday 19th June 2012
Employing the firm's advanced indium gallium phosphide HBT MMIC technology, these modules are suited to for use in the world’s most widely used 3G/4G frequency bands
Tuesday 19th June 2012
The LED substrate is created by applying semiconductor lithography to silicon wafers. It allows for fine pitch interconnection between gallium nitride LED chips and provides a pitch spacing of 50 µm, six times less than other currently available boards
Tuesday 19th June 2012
At 1W power output, these TriQuint products are ideal for use in Very Small Aperture Terminals (VSATs) and point-to-point as well as point-to-multipoint microwave applications
Tuesday 19th June 2012
The firm has hit its development milestones ahead of schedule and secured more financing to accelerate the commercialisation of its gallium nitride power transistors
Tuesday 19th June 2012
The cash from the U.S. Department of Energy, will be used to accelerate the manufacturing of the firm's gallium indium phosphide / gallium arsenide / germanium solar cells
Monday 18th June 2012
New tungten crucibles made by Plansee make it simpler and cheaper to grow sapphire ingots used in the production of LEDs
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Monday 18th June 2012
Two new stages from Aerotech are ideal for use in mapping applications used to determine photoluminescence, thickness and reflectance uniformity in materials such as PINs, lasers and VCSELs
Monday 18th June 2012
The new gallium nitride solutions are claimed to increase RF performance and enable smaller circuits, as well as better-performing low voltage and high power systems
Monday 18th June 2012
Designed for both "chip on board" and "system-in-package" (SiP) implementations, both product families employ the firm's gallium arsenide pHEMT and gallium indium phosphide HBT technology and operate over a wide range of operating voltages. The highly integrated FEMs significantly reduce external component count outside the core WiFi chipset
Monday 18th June 2012
The package, based on gallium arsenide technology, provides a smaller footprint than is typically available for a digital phase shifter with an internal driver
Monday 18th June 2012
The gallium nitride matched power device extends range, reduce size and weight, and improves overall ruggedness in new and existing radar designs
Monday 18th June 2012
With the aid of this modular plant, innovative large-scale manufacturing processes for CIGSSe solar cells will be developed

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