The Taiwanese firm's latest nitride based LED series are claimed to offer low thermal resistance and high performance. The C52 Series also can achieve the low cost of industry target of over 400lm/$ for a COB LED light source.
Four CRIUS II-XL systems in a 19 x 4-inch wafer configuration and two G5 HT reactors in a 14 x 4-inch wafer configuration, will be used for the manufacturing of UHB gallium nitride based blue and white LEDs
he firm has successfully assembled and qualified high brightness silicon substrate LED arrays and will begin offering high-volume, full turn-key manufacturing services. These include electrical testing, laser mark and tape-and-reel production
The PIC provider is obtaining gross proceeds at $8.00 per share for expansion in Russia to accelerate adoption of high-speed, agile and coherent indium phosphide PIC technologies. A portion of the cash from the sale of the shares will be used for corporate purposes and establish design and production capabilities in Russia for the benefit of the global organisation
The firm has unveiled a new series of high-power silicon carbide devices, including a 1700V SiC MOSFET, which can reduce the cost of power electronic systems at the same time as providing improved energy efficiency