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Wednesday 27th June 2012
The firm's XLamp LEDs in the Beibei district are estimated to deliver annual maintenance and electricity savings of US $3 million
Wednesday 27th June 2012
The EV LED has been designed to have higher thermal endurance, ensuring better reliability at higher temperatures
Wednesday 27th June 2012
According to SEMI, there is prolonged challenging environment for PV equipment suppliers
Tuesday 26th June 2012
The MOCVD system will be used to investigate the heteroepitaxial growth of gallium nitride based alloys on silicon wafers, mainly for LED research
Tuesday 26th June 2012
Osram 's new blue LED chip for emergency vehicle lighting comprises indium gallium nitride and can be operated at a high current while providing a sustained, powerful, bright blue light
Tuesday 26th June 2012
Edwards' new iXH645H dry vacuum pump has been designed with nitride LEDs and III-V compound semiconductor MOCVD growth in mind. The company says it requires minimal maintenance and maximises uptime in harsh manufacturing environments
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Tuesday 26th June 2012
With this move, Nitronex hopes to expand its market presence in the rapidly growing, high performance, GaN RF power device market using its gallium nitride on silicon technology
Tuesday 26th June 2012
GigOptix will use IBM's silicon germanium technology to reduce power, size and increase the integration level of chips
Tuesday 26th June 2012
SemiLEDs has agreed to make a one-time payment to Cree for past damages and to stop the importation and sale of its accused products in the United States
Tuesday 26th June 2012
First Solar installs 10 millionth solar plant PV modules
Monday 25th June 2012
When completed in 2013, the cadmium telluride solar facility will generate enough electricity to power 75,000 homes
Monday 25th June 2012
The products are targeted towards improving 4G/LTE telecom infrastructures. The aim is to quicken time to market and provide rapid simulation of complex waveforms such as W-CDMA and OFDMA
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Monday 25th June 2012
The producer of high efficiency thin-film CIGS solar modules has raised the bar for a high volume manufacturing process
Monday 25th June 2012
Tom Mitchell, co-founder and president of Seagate Technology company, and formerly Thailand’s largest foreign employer, has been appointed as an independent Class I Director
Monday 25th June 2012
The new model can be used to assess electrical properties of solar cells as well as many III-V based device such as those based on gallium arsenide, indium phosphide and III-nitrides
Monday 25th June 2012
The fully owned subsidiary of the firm will no longer operate the CIGS 35 MWp Berlin, Germany production facility
Thursday 21st June 2012
The provider of sapphire substrates and products to the LED, RFIC, semiconductor, and optical industries has seen a 546 percent five-year revenue growth, with $134 million in revenue in 2011
Thursday 21st June 2012
The gallium nitride HIC is optimised for high gain and high powerand is suited to AESA, and PESA radar applications
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Thursday 21st June 2012
The gallium nitride device is suited to applications such as high definition video broadcast and broadband data communication
Thursday 21st June 2012
The platform, which employs the firm's indium phosphide technology, was awarded for its disruptive impact on the optical network industry
Thursday 21st June 2012
NXP has announced that it will be demonstrating its gallium nitride based products at the IEEE MTT-S International Microwave Symposium in Montreal this week
Thursday 21st June 2012
The BGU8006 low-noise amplifiers, measuring just 0.65 x 0.44 x 0.2mm, have an extremely low noise figure of 0.6 dB and employ the firm's silicon germanium process
Thursday 21st June 2012
The indium phosphide PIC developer is building on its 100Gb/s platform with the new third generation system
Thursday 21st June 2012
New 1200V silicon carbide diodes will enable manufacturers of products such as solar inverters, SMPS, induction heaters, UPS and motor drives to benefit from increased performance and reduced space

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