Navitas to present Power Electronics keynote
Keynote will share new insights on how GaN power ICs improve speed, efficiency and power density
Navitas Semiconductor has announced that Stephen Oliver, vice president of sales and marketing, will deliver a keynote presentation titled, 'GaN Power ICs: Integration Drives Performance' at the first annual Power Electronics Conference 2017 to be held Dec 5th in Munich, Germany.
The keynote will share new insights on how the industry's first and only GaN power ICs create dramatic changes in speed, efficiency and densities for a broad range of power systems.
The one-day conference presents an interactive forum for wide bandgap manufacturers, partners, and customers to share expertise in accelerating adoption of new GaN and SiC devices.
"After 40 years utilising slow and inefficient silicon devices with little change to circuit architectures, the power electronics industry is entering an exciting new era of new materials, new devices, new magnetics, new controllers and imaginative topologies", said Oliver.
"As the world's first and only GaN power IC provider, Navitas looks forward to sharing proof points demonstrating how monolithic integration of power circuits - all in GaN - when combined with new resonant topologies leads to a dramatic increase in frequency and efficiency and a new generation of high-efficiency, high-density power converters".
The conference will be held at the Hilton Hotel at the Munich Airport in Germany on December 5th, 2017 from 9am to 5pm. Organised by Bodo's Power Systems and ICC Media / AspenCore Europe, the conference will focus on GaN and SiC, with the inaugural theme 'Wide Band Gap is no Mystery'.
