Loading...
News Article

Solar-Tectic announce new Thin-film displays technology

News

Thin-film transistor technology has potential to replace low temperature polysilicon for making OLEDs

Solar-Tectic LLC has announced a breakthrough display technology that replaces the standard LTPS (low temperature polysilicon) process used world-wide by major display manufacturers.

LTPS is a process central to the manufacture of thin-film transistors (TFTs) used in AMOLED displays (Active Matrix Organic Light Emitting Diodes), LCD displays, and micro-LED technologies. Yet LTPS is lacking in several respects, such as current, uniformity and scale-up for larger size displays.

The new process, which Solar-Tectic is calling 'LT1CS' or 'Low temperature single crystal silicon' emphasises the single crystal-like silicon quality, which arises from the highly oriented c-axis aligned or 'textured' silicon crystals. LTPS in contrast uses polycrystalline silicon.

It is well known that oriented or aligned crystalline thin-films perform much better than polycrystalline thin-films on many levels. In addition, the new 'LT1CS' process can achieve films with large grains or crystals which also enhance performance in the backplane of displays.

Electron mobility in textured, aligned thin silicon films would be higher than in IGZO (indium gallium zinc oxide) which is another contender to replace LTPS, and uniformity in the LT1CS technology would also be better, according to the company. Currently IGZO performance is lower than LTPS with regard to both electron mobility and uniformity. IGZO also consists of indium and gallium .

Solar-Tectic says its LT1CS technology is similar to CAAC-IGZO, which is c-axis aligned IGZO. In a way, one could say that LT1CS does for silicon what CAAC-IGZO does for IGZO. The company's technology, which includes III-V materials like GaN, could also be used in the emerging micro-LED (µLED), field which combines III-V materials with silicon thin-film transistors.

The highest quality TFTs in today's market require fabrication on a quartz substrate due to the high temperatures necessary for the quality film growth. ST's LT1CS technology is a low temperature process which means ordinary soda-lime glass can be used, saving costs of production.

The ST technology was recently patented (see US patents 9,054,249 B2; US 9,722,130 B2; and US 8,916, 455 B2). Relevant papers have also been published demonstrating the core technology. A patent has also recently been granted for III-V/silicon thin-film LEDs and transistors (see US 9,818,964).

The technology was invented by the late Praveen Chaudhari, a materials physicist, and recipient of the US National Medal of Technology, and Ashok Chaudhari, CEO of Solar-Tectic LLC.

Say hello to the heterogeneous revolution
Double heterostructure HEMTs for handsets
AlixLabs to collaborate with Linköping University
SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: