Aixtron, Azzurro, MicroGaN, Infineon, SiCrystal, & SMA Solar Technology have partnered into a project to improve energy consumption in renewable, telecommunications and lighting systems. They will use SiC and Ga-on-Si technologies to produce cheaper devices.
After the resignation of Gilles Bouchard who was CEO and President and on the company's Board of Directors, Bosco will hold the fort until a permanent successor is found, expected in the first half of 2011.
The high performance Sabre Series 11-02 designed for military, aerospace, industrial and utility applications are gallium arsenide (GaAs) based. The transmitters are high performance 850nm VCSELs while the optical receivers are based on a GaAs PIN structure.
The scientists at Osram were honored by the Karl Heinz Beckurts Foundation for their projectors which are claimed to have unlimited depth of sharpness and extremely high resolution, which go beyond that of LED solutions.
The Russian based firm says that currently sapphire substrates are used for more than 90% of GaN LED chips produced by the industry. This latest development should provide higher cost savings to LED manufacturers.
These amplifiers best operate in combination with the MGF4921AM, Mitsubishi Electric's low noise gallium arsenide (GaAs) high electron mobility transistor already available for the first stage of amplifying.
Researchers used magnets to tune supercooled gallium arsenide (GaAs) into a photon detector. This latest development is hoped to eventually be used in computer chips to produce faster and more powerful computers.
Ge P-channel transistors could potentially be combined with complementary III-V N-channel transistors to form a suitable CMOS architecture. This would provide higher mobility and could potentially lead to processors with higher performance and better energy efficiency.