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Tuesday 14th December 2010
The RFRX8888 IC is ideal for 1550 nm optical wavelength RF analog or digital overlay video receive circuitry employed in xPON FTTP ONT triplexer and quadplexer modules.
Tuesday 14th December 2010
The company restructuring also sees James Zhu, currently Chief Accounting Officer, to be appointed as interim CFO from the new year.
Tuesday 14th December 2010
Aixtron, Azzurro, MicroGaN, Infineon, SiCrystal, & SMA Solar Technology have partnered into a project to improve energy consumption in renewable, telecommunications and lighting systems. They will use SiC and Ga-on-Si technologies to produce cheaper devices.
Tuesday 14th December 2010
Raytheon has awarded TriQuint for its continuing support in the Space and Airborne Systems (SAS) business for the 3rd year in a row.
Sunday 12th December 2010
After the resignation of Gilles Bouchard who was CEO and President and on the company's Board of Directors, Bosco will hold the fort until a permanent successor is found, expected in the first half of 2011.
Sunday 12th December 2010
The firms will work together to supply CPV utility-scale solar systems to Southwestern U.S. states with sunny dry climates.
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Sunday 12th December 2010
The firms recently presented work at the IEDM 2010 Conference in San Francisco regarding how InGaAs FETs could be used for low power logic applications.
Friday 10th December 2010
Keithley is now an indirect wholly owned subsidiary of Danaher Corporation and, as a result of the merger, Keithley shares have already ceased trading on the New York Stock Exchange.
Friday 10th December 2010
The firm’s Board of Directors has authorized the repurchase of up to $15 million of the Company's common stock.
Friday 10th December 2010
The hybrid design integrates an AlGaN layer acting as a sensor on a Si(111) substrate. The device would be ideally suited to solar science, EUV microscopy and advanced EUV lithography applications.
Friday 10th December 2010
The firm has unveiled its new TOPLED Compact 5630 which it says is a truly innovative addition to the world of LED backlighting for use in PCs and flat screens of all sizes.
Friday 10th December 2010
The high performance Sabre Series 11-02 designed for military, aerospace, industrial and utility applications are gallium arsenide (GaAs) based. The transmitters are high performance 850nm VCSELs while the optical receivers are based on a GaAs PIN structure.
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Friday 10th December 2010
The scientists at Osram were honored by the Karl Heinz Beckurts Foundation for their projectors which are claimed to have unlimited depth of sharpness and extremely high resolution, which go beyond that of LED solutions.
Thursday 9th December 2010
Aixtron has received an order for a 4-inch wafer configuration Black Magic deposition system from the graphene manufacturer.
Thursday 9th December 2010
The new GaN transistor extends the operating voltages of a variety of power switching systems including inverters for industrial use and uninterruptible power supplies.
Thursday 9th December 2010
The Russian based firm says that currently sapphire substrates are used for more than 90% of GaN LED chips produced by the industry. This latest development should provide higher cost savings to LED manufacturers.
Wednesday 8th December 2010
The joint venture “Suncore” aims to produce CPV receivers, modules and systems for terrestrial solar power applications.
Wednesday 8th December 2010
These amplifiers best operate in combination with the MGF4921AM, Mitsubishi Electric's low noise gallium arsenide (GaAs) high electron mobility transistor already available for the first stage of amplifying.
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Wednesday 8th December 2010
Researchers used magnets to tune supercooled gallium arsenide (GaAs) into a photon detector. This latest development is hoped to eventually be used in computer chips to produce faster and more powerful computers.
Tuesday 7th December 2010
The InGaAs Goodrich system is extremely small, low power and lightweight and advanced circuitry allows it to run without cooling unlike other imaging devices in the SWIR band.
Tuesday 7th December 2010
The firm will present its latest results at the Barclays Capital 2010 Global Technology on December 9 2010.
Tuesday 7th December 2010
The two firms have formed a JV to develop Silicon-on-Sapphire (SOS) substrates for RFIC Manufacturing. The continued evolution of the SOS wafer is part of a long-term UltraCMOS technology roadmap.
Tuesday 7th December 2010
The firm has appointed Solekia as its distributor in Japan to expand sales for its growing ASIC product family.
Tuesday 7th December 2010
Ge P-channel transistors could potentially be combined with complementary III-V N-channel transistors to form a suitable CMOS architecture. This would provide higher mobility and could potentially lead to processors with higher performance and better energy efficiency.

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