EPC introduces GaN Half Bridge for Class-D Audio
EPC has announced the EPC2106, an enhancement-mode monolithic GaN transistor half bridge that integrates two eGaN power FETs into a single device.
According to the company, the new device offers power systems designers a solution that switches over 2 MHz resulting in no interference with the AM band, reducing costs for filtering, thus making it suitable for low distortion Class-D audio.
The EPC2106 has a voltage rating of 100V with a typical RDS(on) of 55mΩ, output capacitance less than 600 pF, zero reverse recovery (QRR), and a maximum pulsed drain current of 18A. It comes in a 1.35 mm x 1.35 mm chip-scale package for improved switching speed and thermal performance for increased power density.
To demonstrate, the EPC9106 Class-D audio amplifier reference design uses high frequency switching GaN power transistors in the power stage providing precise high-power reproduction of the Class-D audio signal.
A 2in x 1.5in development board is available (EPC9055) containing one EPC2106 integrated half-bridge component using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and has been laid out for optimal switching performance allowing designers to quickly evaluate the advantages that GaN can bring to their systems, according to EPC.
