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Monday 14th July 2008
Cree says it's already working with the largely luminaire-level specifications; meanwhile, the US government squabbles over energy-efficiency programs that use the standards.
Friday 11th July 2008
Teaming with Matsushita Electric Works, the Japanese research institute has revolutionized InAlGaN LED design to make the highest output power device in the 280 nm region.
Thursday 10th July 2008
The equipment maker says its recent $15 million-plus deal with WIN Semiconductor reflects a need for more, higher-yielding, processing tools to serve chip makers focused on communications markets.
Thursday 10th July 2008
Delayed product ramp and shipment timing are to blame for a second-quarter shortfall, although the long-term picture remains healthy.
Thursday 10th July 2008
Switching to a polarization matched GaInN/AlGaInN active region combats droop and improves LED efficacy at high currents, according to researchers at Rensselaer Polytechnic Institute and Samsung Electro-Mechanics
Wednesday 9th July 2008
The 324 GHz single stage InP amplifier is an important landmark for SWIFT, the DARPA program hoping to develop advanced imaging systems.
Tuesday 8th July 2008
Lux Research says that when solar power costs reach grid parity, compound semiconductor systems will near 2 percent of the $70 billion overall market.
Monday 7th July 2008
Deeply entrenched silica lattices hold the key to producing photonic crystal LEDs that maintain electrical performance while improving light extraction, say South Korean scientists.
Friday 4th July 2008
If MOCVD process engineers want greater control over their vapor concentrations then they should consider our upgraded VaporStation, says Rohm and Haas.
Thursday 3rd July 2008
The 12-contact Unity probe combines RF signal, logic, power and ground in-line engineering tests for frequencies up to 20 GHz, and will soon scale to 24-contacts and 80 GHz.
Monday 30th June 2008
Device used excitons to switch beams of light
Friday 27th June 2008
The Belgian materials giant adds credence to the emerging market for terrestrial concentrator photovoltaics based on III-V materials, with a multi-million euro investment in a new germanium wafer facility in Oklahoma.
Friday 27th June 2008
Researchers in Korea believe that their tiny green laser ticks all the boxes for mobile projection applications.
Thursday 26th June 2008
Producing GaN HEMTs on its existing GaAs manufacturing lines means that the RF chipmaker will be shipping them in its latest cable TV modules this year.
Tuesday 24th June 2008
A superluminescent LED has for the first time been engineered to exhibit high output power as well as a broadband emission spectrum.
Tuesday 24th June 2008
The 2008 MTT-S International Microwave Symposium in Atlanta unveils thriving competition between who has the best GaN devices, and who has the best gadgets at their booth.
Friday 20th June 2008
Two of the biggest III-V companies are responding to the needs of the defense industry to push the power and frequency of RF transistors - and look set to move to GaN production on 4-inch wafers in doing so.
Friday 20th June 2008
The latest 0.18 micron SiGe foundry capability offers improved integration and efficiency as the company looks forward to its future under Tower Semiconductor's ownership.
Thursday 19th June 2008
The latest GaAs chips for wireless infrastructure from the European foundry use its PHEMT process to combine high linearity and low noise figures.
Wednesday 18th June 2008
The Japanese company hopes high-power devices, such as the market-leading HEMT that it's bringing into production, will enable it to succeed in a tight RF GaN market.
Tuesday 17th June 2008
It's good news and bad news for the photonic integrated circuit manufacturer, as it scores a major deal with Deutsche Telekom, but lowers sales guidance for the back end of 2008.
Tuesday 17th June 2008
Semiconductor equipment vendor Tegal Corporation says that its strong finances put it in a position to take advantage of weakened competitors who are feeling the strain.
Monday 16th June 2008
As Cree launches a GaN MMIC foundry service, Yole Developpement predicts that this week's MTT-S show will see the release of new wide-bandgap devices and deployment by systems integrators.
Friday 13th June 2008
Despite recovering well from a weak start to its fiscal year, the fiber-optic component maker disappoints some with its 2009 guidance.

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