News Article
EPC eGaN FET versatile board suited to prosumers
he EPC9106 Class D audio amplifier reference design uses gallium nitride power transistors to achieve professional quality sound with 96 percent power efficiency
Efficient Power Conversion Corporation (EPC) is introducing the EPC9106, a reference design for a 150 W, 8 Ω Class D audio amplifier.
EPC9106 demo demonstration board
This demonstration board uses a Bridge-Tied-Load (BTL) design, composed of four ground-referenced half-bridge output stages, which allows scalability and expandability of the design. All elements that can impact the sonic performance of Class D Audio systems are minimised or eliminated in an eGaN FET-based system.
The EPC9106 features the EPC2016 eGaN FET in conjunction with the LM5113 100 V half-bridge gate driver from Texas Instruments. This board demonstrates that high quality sound can be achieved in a small size due to the performance capabilities of high frequency switching eGaN FETs when coupled with this dedicated eGaN driver.
With this high efficiency, the EPC9106 design allows for the complete removal of any heatsink requirement, which also reduces the potential contribution to radiated EMI/EMC emissions.
The power block of the EPC9106 including eGaN FETs, driver, inductor and input/output caps is an ultra compact 2.1 mm x 1.6 mm layout - about the size of a dime. Despite its small size, the EPC9106 reference design achieves 96 percent efficiency at 150 W, 8 Ω, and 92 percent efficiency at 250 W, 4 Ω.
EPC9106 demo demonstration board
This demonstration board uses a Bridge-Tied-Load (BTL) design, composed of four ground-referenced half-bridge output stages, which allows scalability and expandability of the design. All elements that can impact the sonic performance of Class D Audio systems are minimised or eliminated in an eGaN FET-based system.
The EPC9106 features the EPC2016 eGaN FET in conjunction with the LM5113 100 V half-bridge gate driver from Texas Instruments. This board demonstrates that high quality sound can be achieved in a small size due to the performance capabilities of high frequency switching eGaN FETs when coupled with this dedicated eGaN driver.
With this high efficiency, the EPC9106 design allows for the complete removal of any heatsink requirement, which also reduces the potential contribution to radiated EMI/EMC emissions.
The power block of the EPC9106 including eGaN FETs, driver, inductor and input/output caps is an ultra compact 2.1 mm x 1.6 mm layout - about the size of a dime. Despite its small size, the EPC9106 reference design achieves 96 percent efficiency at 150 W, 8 Ω, and 92 percent efficiency at 250 W, 4 Ω.
