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Qorvo Introduces 1.8kW, 65V GaN-on-SiC Transistor

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Critical IFF and avionics applications get boost in signal integrity and range with high power transistor

RF company Qorvo has introduced what is believes is world's highest power GaN-on-SiC RF transistor. Operating with 1.8kW at 65V, the QPD1025 is said to deliver outstanding signal integrity and extended reach essential for L-band avionics and Identification Friend or Foe (IFF) applications.

Asif Anwar, executive director of Strategy Analytics' Strategic Technologies Practice, said: "Qorvo's QPD1025 transistor represents a true game changer in this segment. It offers comparable pulsed power and duty cycle performance to silicon LDMOS and silicon bipolar devices, but with a marked improvement in efficiency. Qorvo further achieves this high power and efficiency without introducing exotic materials such as diamond into the process flow for thermal management, ensuring a solution that is cost effective."

Roger Hall, general manager, Qorvo High Power Solutions, said: "This new high-power transistor will save customers time and money by eliminating the difficult exercise of combining amplifiers to create multi-kilowatt solutions. The QPD1025 has significantly better drain efficiency and beats LDMOS by nearly 15 percentage points of efficiency, which is significant in IFF and avionics applications."

Engineering samples of the QPD1025 are available now.

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