Qorvo Introduces 1.8kW, 65V GaN-on-SiC Transistor
Critical IFF and avionics applications get boost in signal integrity and range with high power transistor
RF company Qorvo has introduced what is believes is world's highest power GaN-on-SiC RF transistor. Operating with 1.8kW at 65V, the QPD1025 is said to deliver outstanding signal integrity and extended reach essential for L-band avionics and Identification Friend or Foe (IFF) applications.
Asif Anwar, executive director of Strategy Analytics' Strategic Technologies Practice, said: "Qorvo's QPD1025 transistor represents a true game changer in this segment. It offers comparable pulsed power and duty cycle performance to silicon LDMOS and silicon bipolar devices, but with a marked improvement in efficiency. Qorvo further achieves this high power and efficiency without introducing exotic materials such as diamond into the process flow for thermal management, ensuring a solution that is cost effective."
Roger Hall, general manager, Qorvo High Power Solutions, said: "This new high-power transistor will save customers time and money by eliminating the difficult exercise of combining amplifiers to create multi-kilowatt solutions. The QPD1025 has significantly better drain efficiency and beats LDMOS by nearly 15 percentage points of efficiency, which is significant in IFF and avionics applications."
Engineering samples of the QPD1025 are available now.