EPC Introduces tiny 350V eGaN Power Transistor
Device for EV charging, solar power inverters, motor drives, and multi-level converter configurations is 20 times smaller than comparable silicon
Efficient Power Conversion (EPC) has announced the EPC2050, a 350V GaN transistor with a maximum RDS(on) of 65 mΩ and a 26A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400 V input to 48 V output LLC converter for telecom or server power supplies.
The EPC2050 is 1.95 mm x 1.95 mm (3.72 mm2) integrating a half bridge with gate driver occupies in five times less area than a comparable silicon solution. Despite the small size of the chip-scale packaging, EPC2050 handles thermal conditions more efficiently than plastic packaged MOSFETs, according to the company.
"The performance and cost gap of silicon with eGaN technology widens with the 350 V, EPC2050, that is almost 20 times smaller than the closest silicon MOSFET." said Alex Lidow, EPC's CEO.
The EPC9084 development board is a 350V maximum device voltage, half bridge featuring the EPC2050, and the Silicon Labs Si8274GB1-IM gate driver. This 51mm x 38 mm board is designed for optimal switching performance and contains all critical components for easy evaluation of the 350 V EPC2050 eGaN FET.
The EPC2050 eGaN FET is priced for 1K units at $3.19 each and the EPC9084 development board is priced at $118.75 each from Digikey.
