Integra to Launch GaN Power Devices at IMS 2018
New range of 50Î© fully matched RF power transistors and integrated modules target pulsed radar applications.
Integra Technologies, a US designer of high-power RF power transistors and module, is launching several new 50Î© (fully matched) RF power transistors and integrated RF power modules for pulsed radar applications at this year's International Microwave Symposium in Philadelphia, PA.
IIGNP0912L1KW is a 50Î© GaN/SiC, RF power module for L- Band avionics systems operating over the instantaneous bandwidth of 0.960 - 1.215 GHz. This integrated amplifier module supplies a minimum of 1000W of peak pulse power, under the conditions of 2.5ms pulse width, and 20 percent duty cycle, while offering excellent thermal stability.
IGT5259L50 is a 50Î© GaN/SiC transistor, offering 50W at 5-6 GHz for pulsed C-band radar applications.
IGN1214L500B is a high-power GaN/SiC HEMT transistor that supplies 500W at 1.2 - 1.4 GHz, and offers 50V drain bias, 15.5dB gain, and 65 percent efficiency. This transistor is designed for long-pulse L-band radar applications.
Along with these products, Integra will be discussing upcoming products to be released, including RF power modules up to 2000W, X-band transistors, and a line of devices with advanced thermal control.
"We're thrilled to mark IMS 2018 as Integra's break out moment in providing the industry's most advanced standard and semi-custom RF power devices," says Integra's CEO Suja Ramnath. "Our R&D team has been working diligently to push the boundaries of power and efficiency and we invite all radar system designers to partner up with us and "˜Find Your Power'.