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Integra Launches GaN/SiC Modules To Simplify Radar Design

 
Higher-level building blocks are suitable for SWaP-C optimised high power amplifiers (HPAs) found in pulsed and CW radar systems

Integra Technologies, a US designer and supplier of high-power RF power transistors and RF power modules, has launched a new line of over a dozen standardised RF power modules.

Differentiating these integrated standard modules from custom or build-to-print, PCB amplifier assemblies these new, efficient GaN/SiC RF power modules are being developed to offer a new level of integration which results in powerful yet simple, higher-level building blocks for creating SWaP-C optimised high power amplifiers (HPAs) found in pulsed and CW radar systems.

Built-in functions can include RF matching, gate-pulsing and sequencing (GPS), output noise suppression, temperature compensation, and VSWR protection. Integra’s RF power modules are available in a variety of RF bands, and future standard and semi-custom solutions will be built around Integra’s commitment to push their advanced GaN-on-SiC 50-ohm RF power transistor technology up to X-band territories. Standard RF power modules currently offer output power up to 2400 W, and efficiencies up to 70 percent. Unique footprints and packaging approaches are available.


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