VisIC announces 9 kW GaN Half Bridge board
VisIC Technologies, a GaN power semiconductor company based in Israel, has announced a new water cooled half bridge evaluation board to demonstrate the performance achievable using its GaN All-Switches (Advanced Low Loss Switches).
The V22N65A-HBEVB evaluation platform can be operated in any half bridge topology and was tested in buck and boost topologies up to 9kW, using only single V22N65A transistors. This is the first GaN based solution on the market that can deliver up to 9kW of power, without the need for paralleling, making it ideal for high-density On-Board-Chargers (OBC) in hybrid and electric vehicles.
The V22N65A All-Switch SMD discrete top cooled devices feature ultra-low conduction and switching losses coupled with an advanced isolated package design, allowing maximum performance and power out of each GaN device.
A low parasitic inductance power and gate loop design, combined with a high threshold voltage (5V) allows designers to safely employ VisIC GaN switches in high power applications in multi-kW range.
The V22N65A-HBEVB evaluation platform consists of: a half bridge power stage using 22mOhm GaN All-Switches; isolated half bridge driver from Silicon Labs (Si82394); two isolated auxiliary power supplies from Murata (NXE251212MC); and dead Time control from 75ns to 200ns.
