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II-VI And Sumitomo Establish GaN-on-SiC HEMT Partnership

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Strategic collaboration will manufacture devices for next generation wireless networks

II"VI Incorporated, a provider of compound semiconductor devices, has announced a strategic collaboration with Sumitomo Electric Device Innovations to establish a vertically integrated, 150 mm wafer fabrication platform to manufacture GaN-on-SiC HEMT devices for next generation wireless networks.

"II-VI has invested aggressively to establish a world-class 150 mm compound semiconductor manufacturing platform," said Keiichi Imamura, corporate director, Sumitomo Electric Device Innovations. "Based on rapidly growing market opportunities, it was important to act now to evolve our long standing commercial relationship into a full strategic relationship. We will leverage II-VI's manufacturing platform to achieve economies of scale to enable us to meet the upcoming global demand for GaN-on-SiC HEMT devices."

"We are excited to collaborate with SEDI, the market leader in high-performance gallium nitride HEMT products for wireless communications. This collaboration establishes a differentiated, vertically integrated value chain solution that spans from substrates through RF modules," said Chuck Mattera, president and CEO, II-VI Incorporated.

"Coupling SEDI's industry-leading HEMT device technology with our 150 mm manufacturing platform will accelerate both companies' wide-bandgap RF product roadmaps, as well as secure a leading technology and market position for many years to come. To be ready for the mass production ramps, we are preparing a 150 mm semi-insulating substrate manufacturing platform and expanding our Warren, NJ Device fab to add these core technologies to our growing optoelectronic device fab capability.

II-VI serves markets for wide-bandgap materials from its facilities in Pinebrook, NJ and Champaign, IL. The 150 mm production facility in Warren, NJ is expected to be qualified for GaN-on-SiC HEMT production in mid-calendar year 2020.


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