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II-VI And Sumitomo Establish GaN-on-SiC HEMT Partnership

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Strategic collaboration will manufacture devices for next generation wireless networks

II"VI Incorporated, a provider of compound semiconductor devices, has announced a strategic collaboration with Sumitomo Electric Device Innovations to establish a vertically integrated, 150 mm wafer fabrication platform to manufacture GaN-on-SiC HEMT devices for next generation wireless networks.

"II-VI has invested aggressively to establish a world-class 150 mm compound semiconductor manufacturing platform," said Keiichi Imamura, corporate director, Sumitomo Electric Device Innovations. "Based on rapidly growing market opportunities, it was important to act now to evolve our long standing commercial relationship into a full strategic relationship. We will leverage II-VI's manufacturing platform to achieve economies of scale to enable us to meet the upcoming global demand for GaN-on-SiC HEMT devices."

"We are excited to collaborate with SEDI, the market leader in high-performance gallium nitride HEMT products for wireless communications. This collaboration establishes a differentiated, vertically integrated value chain solution that spans from substrates through RF modules," said Chuck Mattera, president and CEO, II-VI Incorporated.

"Coupling SEDI's industry-leading HEMT device technology with our 150 mm manufacturing platform will accelerate both companies' wide-bandgap RF product roadmaps, as well as secure a leading technology and market position for many years to come. To be ready for the mass production ramps, we are preparing a 150 mm semi-insulating substrate manufacturing platform and expanding our Warren, NJ Device fab to add these core technologies to our growing optoelectronic device fab capability.

II-VI serves markets for wide-bandgap materials from its facilities in Pinebrook, NJ and Champaign, IL. The 150 mm production facility in Warren, NJ is expected to be qualified for GaN-on-SiC HEMT production in mid-calendar year 2020.



CS International 26-27 March 2019, Sheraton Airport Hotel, Brussels

In its ninth year, CS International will continue to provide timely, comprehensive coverage of every important sector within the compound semiconductor industry. Presentations are split into 5 key themes and each industry key theme will be delivered by a keynote presentation from a leading industry figure as well as a market analyst presentation tailored to the theme. Together, the talks will detail breakthroughs in device technology; offer insights into the current status and the evolution of compound semiconductor devices; and provide details of advances in tools and processes that will help to drive up fab yields and throughputs. Attendees at the two-day conference will gain an up-to-date overview of the status of the CS industry, and have opportunities to meet many other key players within this community.

Places will be limited, so register your place today: https://cs-international.net

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