II-VI and Sumitomo establish GaN-on-SiC HEMT partnership
II"VI Incorporated, a provider of compound semiconductor devices, has announced a strategic collaboration with Sumitomo Electric Device Innovations to establish a vertically integrated, 150 mm wafer fabrication platform to manufacture GaN-on-SiC HEMT devices for next generation wireless networks.
"II-VI has invested aggressively to establish a world-class 150 mm compound semiconductor manufacturing platform," said Keiichi Imamura, corporate director, Sumitomo Electric Device Innovations. "Based on rapidly growing market opportunities, it was important to act now to evolve our long standing commercial relationship into a full strategic relationship. We will leverage II-VI's manufacturing platform to achieve economies of scale to enable us to meet the upcoming global demand for GaN-on-SiC HEMT devices."
"We are excited to collaborate with SEDI, the market leader in high-performance gallium nitride HEMT products for wireless communications. This collaboration establishes a differentiated, vertically integrated value chain solution that spans from substrates through RF modules," said Chuck Mattera, president and CEO, II-VI Incorporated.
"Coupling SEDI's industry-leading HEMT device technology with our 150 mm manufacturing platform will accelerate both companies' wide-bandgap RF product roadmaps, as well as secure a leading technology and market position for many years to come. To be ready for the mass production ramps, we are preparing a 150 mm semi-insulating substrate manufacturing platform and expanding our Warren, NJ Device fab to add these core technologies to our growing optoelectronic device fab capability.
II-VI serves markets for wide-bandgap materials from its facilities in Pinebrook, NJ and Champaign, IL. The 150 mm production facility in Warren, NJ is expected to be qualified for GaN-on-SiC HEMT production in mid-calendar year 2020.
