EpiGaN boosts production with Aixtron tool
EpiGaN a European supplier GaN technology solutions for telecom, power electronics, and sensor applications, has chosen Aixtron's G5+C MOCVD system to boost its manufacturing capability of large-diameter GaN-on-Si and GaN-on-SiC epiwafers.
The new Aixtron AIX G5+C reactor will be installed at EpiGaN's manufacturing site in Hasselt/Belgium and operational in Q1/2019. The fully automated Planetary MOCVD system features in-situ chamber cleaning and enables configurations of 8x6 inch, or 5x8 inch epitaxial wafers to be automatically loaded and removed from the system in an enclosed cassette environment.
"The demand from our global customer base for GaN product solutions is booming. Our key customers are getting ready to launch and scale-up products based on our GaN RF-power technology, which is optimised for 5G broadband network applications. With Aixtron's AIX G5+C planetary system EpiGaN will increase its capacity for 150mm and 200mm product solutions to cope with these increasing market demands," says EpiGaN co-founder and CEO Marianne Germain. "Aixtron's planetary system combines excellent on-wafer uniformity and run-to-run performance at the lowest cost of ownership "“ these attributes are critical to serve our customer base with products of exceptional performance and at the right price point."
Felix Grawert, president of Aixtron, commented: "We are confident the AIX G5+C will support EpiGaN's demanding requirements for high-quality, cost-effective production of GaN epitaxial wafers as our tool meets the highest standards in terms of uniformity and particle density."
Just recently EpiGaN has released large-diameter versions of its HVRF (High Voltage Radio Frequency) GaN-on-Si, as well as GaN-on-SiC wafer product families tailored to demanding 5G applications needs. With the new Aixtron AIX G5+ MOCVD system EpiGaN expects to quickly scale up and spread out its differentiating technology solutions to the global market.
