News Article

Skyworks Introduces PA For LTE And 5G

News

High efficiency GaAs chip features 100MHz instantaneous bandwidth

Skyworks has unveiled its latest cellular infrastructure chip, the SKY66313-11, a GaAs wide instantaneous bandwidth power amplifier with industry-leading efficiency for FDD/TDD 4G LTE and 5G applications.

This device is used in small cell and massive MIMO base stations to deliver higher data rates and enhanced network efficiency that result in improved carrier capacity and greater coverage for data-intensive, multimedia and Internet of Things devices.

The amplifier's design includes fully-matched input/output and high gain for best-in-class operation.

With an integrated on-chip active bias circuit, the device is said to provide excellent performance over temperature, voltage and process variations and facilitates faster design cycles.

Key features include an instantaneous signal bandwidth of 100 MHz; high-efficiency (PAE = 15 percent at +23 dBm); high linearity of +23 dBm with < -50 dBc ACLR with pre-distortion (100 MHz LTE, 8.5 dB PAR signal); and high gain of 36 dB.

It comes in a compact 16-pin, 5 x 5 x 1.3 mm package (MSL3, 260 degC per JEDEC J-STD-020)


×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
{megaLeaderboard}
X
{normalLeaderboard}
Live Event