Loading...
News Article

Meteksan uses AWR Software for GaN design

Turkish defence firm designs PA matching network for the Cree GaN HEMT CGH-40025F

Meteksan Defence in Turkey designed a power amplifier (PA) matching network for the Cree GaN HEMT CGH-40025F using the NI AWR Design Environment platform, which provided the highly accurate load-pull analysis required to achieve the network’s goals of high power and efficiency, as well as unconditional stability.

“We chose NI AWR software because of its powerful load-pull capabilities,” said Doğancan Eser, designer at Meteksan Defence. “In addition, it was beneficial to use the harmonic balance engine at the beginning of the design to obtain the output power and power-added efficiency (PAE) information for the transistor impedance at the load port.”

The design goals for the PA were to 1) create an amplifier circuit that provides 25 W output power from 1.9 - 2.1 GHz for 28 V operation, 2) reach high power-added efficiency (PAE), and 3) suppress harmonics as much as possible. High power and high efficiency are key requirements for all power amplifiers, and, in addition, harmonic suppression was required in this design in terms of second and third harmonics, which increases network efficiency.

The network needed to be unconditionally stable for all passive source and load impedances. To achieve these goals, load-pull analysis was required to understand the transistor’s impedances at the input and output ports. Load-pull analysis was also used to construct a set of contours on a Smith chart, which determines the maximum output power and efficiency.

Meteksan Defence designers choose the NI AWR Design Environment platform, specifically the powerful load-pull analysis capabilities within Microwave Office circuit design software. The software offers a load-pull script and the needed simulation components such as the harmonic balance tuner (HBTUNER).

Using the load-pull template in the software, the designers obtained the load-pull contours for the transistor. At the beginning of the design, it was beneficial to use the harmonic balance engine to obtain the output power and PAE information for the transistor impedance at the load port.

Next, the designers explored the stability factor of the amplifier circuit. To ensure an unconditionally-stable circuit, they added a series-RC circuit using the capacitor model from the NI AWR model library.

After that, the load-pull analysis was run again to optimise the output power, harmonic suppression, and PAE. In this step, the second and third harmonic impedances were optimised with the HBTUNER, which provided the necessary suppression.

The final results were 25 W of output power with 50 percent PAE and 35 dB of harmonic compression. Measurement results showed the amplifier circuit provided good correlation with NI AWR software simulation in terms of small-signal parameters, and 25 W was obtained from the output of the amplifier.

SPONSOR MESSAGE

Secure Your Hydrogen Supply

A study supply of high-purity hydrogen is critical to semiconductor fabrication. Supply chain interruptions are challenging manufacturers, leading to production slowdowns and stoppages. On-site hydrogen generation offers a scalable alternative for new and existing fabs, freeing the operator from dependence on delivered gas.

Plant managers understand the critical role that hydrogen plays in semiconductor fabrication. That important job includes crystal growth, carrier gas, wafer annealing, and in the emerging Extreme UV Lithography (EUV) that will enable new generations of devices. As the vast need for semiconductors grows across all sectors of world economies, so does the need for high-purity hydrogen.

Take control with Nel on-site hydrogen generation.

Read more
Double heterostructure HEMTs for handsets
AlixLabs to collaborate with Linköping University
SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
x
Adblocker Detected
Please consider unblocking adverts on this website