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Sanan IC Announces 6-Inch SiC Process

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SiC process offers device structures for 650V, 1200V and higher-rated Schottky Barrier Diodes

Sanan IC, a pure-play Chinese compound semiconductor wafer foundry, has announced that it has achieved full process qualification for commercial release of its 6- SiC technology to add to its foundry services portfolio.

With the ability to ensure its supply chain, the company says it provides a dedicated capacity for its 6-inch SiC wafer processing services on top of its III-V compound manufacturing for GaAs, GaN, and InP.

“We are delighted to expand our wafer foundry services to now include SiC and make it commercially available to the wide bandgap semiconductor market world-wide”, said Raymond Cai, CEO of Sanan IC. “We see tremendous business opportunities in serving the high growth power electronics market with SiC displacing silicon solutions due to its higher efficiency, higher switching frequency, and higher temperature characteristics. The enormous growth of the automotive, big data, renewable clean energy, and power utility industries has created opportunities for us to offer SiC foundry services to the global market. Leveraging our state-of-the-art manufacturing plants, robust supply chain, and worldwide team of industry veterans makes Sanan IC the ideal foundry partner”.

Sanan IC’s SiC process technology offers device structures for 650V, 1200V and higher-rated Schottky Barrier Diodes (SBD), to soon be followed by a SiC MOSFET process for 900V, 1200V, and higher. SiC SBDs and SiC MOSFETs, due to higher performance, are emerging for power conversion applications starting from 650V. Given the superior properties of SiC over silicon in terms of higher efficiency, increased power density, higher switching frequency, higher temperature, higher breakdown strength, more compact and lighter system design, several applications have started to embrace this technology.

The adoption of SiC has accelerated into multiple markets such as in photovoltaic solar cells, industrial motor drives, power factor correction (PFC) for enterprise server, telecom base station power supplies. In electric vehicles (EV) and hybrids (HEV), SiC is widely used on the on-board charger (OBC), power train inverters, and DC/DC converters.

According to Yole Développement , the SiC power device semiconductor market is forecasted to have a value over $1.5B by 2023 with a compound annual growth rate (CAGR) of 31 percent from 2017 to 20231. Sanan IC is poised to meet the customers’ demands for quality, volume, ramp, and reliability.

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