Sanan IC Announces 6-Inch SiC Process
SiC process offers device structures for 650V, 1200V and higher-rated Schottky Barrier Diodes
Sanan IC, a pure-play Chinese compound
semiconductor wafer foundry, has announced that it has achieved full process
qualification for commercial release of its 6- SiC technology to add to its
foundry services portfolio.
With the ability to ensure its supply chain,
the company says it provides a dedicated capacity for its 6-inch SiC wafer
processing services on top of its III-V compound manufacturing for GaAs,
GaN, and InP.
Sanan IC’s SiC process technology offers device structures for 650V, 1200V and higher-rated Schottky Barrier Diodes (SBD), to soon be followed by a SiC MOSFET process for 900V, 1200V, and higher. SiC SBDs and SiC MOSFETs, due to higher performance, are emerging for power conversion applications starting from 650V. Given the superior properties of SiC over silicon in terms of higher efficiency, increased power density, higher switching frequency, higher temperature, higher breakdown strength, more compact and lighter system design, several applications have started to embrace this technology.
According to Yole Développement , the SiC
power device semiconductor market is forecasted to have a value over $1.5B by
2023 with a compound annual growth rate (CAGR) of 31 percent from 2017 to 20231. Sanan
IC is poised to meet the customers’ demands for quality, volume, ramp, and
reliability.
