Info
Info

Researchers Predict UWB Future Of Gallium Oxide

News

Promising future in high-voltage rectifiers for power conditioning and in electric cars and PV systems

In the Journal of Applied Physics researchers at the University of Florida, the US Naval Research Laboratory and Korea University provide a detailed perspective on the properties, capabilities, current limitations and future developments for one of the most promising ultrawide bandgaps compounds Ga2O3.

Ga2O3 possesses an extremely wide bandgap of 4.8 electron volts (eV) that dwarfs silicon's 1.1 eV and exceeds the 3.3 eV exhibited by SiC and GaN. The difference gives Ga2O3 the ability to withstand a larger electric field than silicon, SiC and GaN can without breaking down. Furthermore, Ga2O3 handles the same amount of voltage over a shorter distance. This makes it invaluable for producing smaller, more efficient high-power transistors.

"Ga2O3 offers semiconductor manufacturers a highly applicable substrate for microelectronic devices," said Stephen Pearton, professor of materials science and engineering at the University of Florida and an author on the paper. "The compound appears ideal for use in power distribution systems that charge electric cars or converters that move electricity into the power grid from alternative energy sources such as wind turbines."

Pearton and his colleagues also looked at the potential for Ga2O3 as a base for MOSFETs. "Traditionally, these tiny electronic switches are made from silicon for use in laptops, smart phones and other electronics," Pearton said. "For systems like electric car charging stations, we need MOSFETs that can operate at higher power levels than silicon-based devices and that's where Ga2O3 might be the solution."

To achieve these advanced MOSFETs, the authors determined that improved gate dielectrics are needed, along with thermal management approaches that will more effectively extract heat from the devices. Pearton concluded that Ga2O3will not replace SiC and GaN as the as the next primary semiconductor materials after silicon, but more likely will play a role in extending the range of powers and voltages accessible to ultrawide bandgap systems.

"The most promising application might be as high-voltage rectifiers in power conditioning and distribution systems such as electric cars and photovoltaic solar systems," he said.

'Ga2O3 for ultra-high power rectifiers and MOSFETS' by S.J. Pearton et al; Journal of Applied Physics Dec. 11, 2018


CS International 26-27 March 2019, Sheraton Airport Hotel, Brussels

In its ninth year, CS International will continue to provide timely, comprehensive coverage of every important sector within the compound semiconductor industry. Presentations are split into 5 key themes and each industry key theme will be delivered by a keynote presentation from a leading industry figure as well as a market analyst presentation tailored to the theme. Together, the talks will detail breakthroughs in device technology; offer insights into the current status and the evolution of compound semiconductor devices; and provide details of advances in tools and processes that will help to drive up fab yields and throughputs. Attendees at the two-day conference will gain an up-to-date overview of the status of the CS industry, and have opportunities to meet many other key players within this community.

Places will be limited, so register your place today: https://cs-international.net

Info
×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info