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Rohm and Toshiba to collaborate on power devices


METI recognises joint silicon and SiC production plan as supporting stable, secure supply

As a measure towards a secure and stable semiconductor supply, Japan's Ministry of Economy, Trade and Industry (METI) has approved a plan by Rohm and Toshiba to collaborate on the manufacture and increased volume production of SiC and silicon power devices.

Current demand for power devices is expected to see continued growth as automotive and industrial applications shift towards greater electrification and efficiency.

For Rohm (one of the first mass producers of SiC MOSFETs) it's SiC business is a priority project, with aggressive investment to increase production capacity. Toshiba Electronic Devices & Storage has for decades supplied silicon power devices, mainly for automotive and industrial markets. The company started production on a 300mm wafer line last year, and is accelerating investment to enhance capacity. It is also advancing development of a wider lineup of SiC power devices, especially for automotive and power transmission and distribution applications.

Under intensifying international competition in the semiconductor industry, Rohm and Toshiba have been considering collaboration in the power device business for some time, and that resulted in the joint application.

Rohm and subsidiary Lapis Semiconductor will invest around $2B (289.2 billion yen).Toshiba Electronic Devices & Storage and its subsidiary Kaga Toshiba will invest around $677 M (99.1 billion yen). The maximum government subsidy is $885M (129.4 billion yen): 1/3 of the total investment amount.

Production sites will be Kaga Toshiba for silicon power devices, and Lapis Semiconductor Miyazaki Plant No.2 for SiC power devices and SiC wafers.

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