2000V CoolSiC MOSFETs offer increased power density
Infineon introduces TO-247PLUS-4-HCC-packaged devices suitable for DC link systems with up to 1500V DC
Infineon has announced 2000V CoolSiC MOSFETs in the TO-247PLUS-4-HCC package to meet demand for increased power density without compromising reliability under demanding high voltage and switching frequency conditions.
The CoolSiC MOSFETs are designed offer a higher DC link voltage so that the power can be increased without increasing the current. It is believed to be the first discrete SiC device with a breakdown voltage of 2000V on the market and comes in a TO-247PLUS-4-HCC package with a creepage distance of 14 mm and clearance distance of 5.4 mm. With low switching losses, the devices are suitable for solar (e.g. string inverters) as well as energy storage systems and EV charging.
Infineon says the product family is suited for high DC link systems with up to 1500 V DC. Compared to 1700 V SiC MOSFETs, the devices also provide a sufficiently high overvoltage margin for 1500 V DC systems. The CoolSiC MOSFETs deliver a benchmark gate threshold voltage of 4.5 V and are equipped with a body diode for hard commutation.
In addition to the CoolSiC MOSFETs 2000 V, Infineon will soon be launching the matching CoolSiC diodes: The first launch will be the 2000 V diode portfolio in the TO-247PLUS 4-pin package in the third quarter of 2024, followed by the 2000 V CoolSiC diode portfolio in the TO-247-2 package in the final quarter of 2024. These diodes are particularly suitable for solar applications. A matching gate driver portfolio is also available.
The CoolSiC MOSFET 2000 V product family is available now. In addition, Infineon also offers a suitable evaluation board: the EVAL-COOLSIC-2KVHCC. Developers can use the board as a precise universal test platform to evaluate all CoolSiC MOSFETs and diodes 2000 V and the EiceDRIVER Compact Single Channel Isolated Gate Driver 1ED31xx product family through double pulse or continuous PWM operation.
